APT1001RBVFR APT1001RSVFR 1000V 11A 1.00 BVFR POWER MOS V FREDFET 3 D PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layout. Avalanche Energy Rated Lower Leakage D Faster Switching FAST RECOVERY BODY DIODE G 3 TO-247 or Surface Mount D PAK Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT1001RBVFR SVFR UNIT V Drain-Source Voltage 1000 Volts DSS I Continuous Drain Current T = 25C 11 D C Amps 1 I Pulsed Drain Current 44 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 278 C P D Linear Derating Factor W/C 2.22 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 11 AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 1210 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 1000 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 5.5A) 1.00 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 1000V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 800V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts DS GS D 24 GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT1001RBVFR SVFR Symbol MIN TYP MAX UNIT Characteristic Test Conditions C Input Capacitance 3050 V = 0V iss GS C Output Capacitance V = 25V 280 pF oss DS C f = 1 MHz Reverse Transfer Capacitance 135 rss Q 3 Total Gate Charge V = 10V 150 g GS Q V = 500V Gate-Source Charge 16 nC gs DD I = 11A 25C Q Gate-Drain Mille) Charge D 70 gd t Turn-on Delay Time V = 15V 12 d(on) GS t V = 500V Rise Time 11 r DD ns I = 11A 25C t Turn-off Delay Time 55 D d(off) R = 1.6 t G Fall Time 12 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 11 S Amps I 1 SM Pulsed Source Current (Body Diode) 44 2 V Volts SD Diode Forward Voltage (V = 0V, I = -11A) 1.3 GS S dv / dv 5 V/ns Peak Diode Recovery / 18 dt dt Reverse Recovery Time T = 25C 200 j t ns rr di (I = -11A, / = 100A/s) S dt T = 125C 350 j Reverse Recovery Charge T = 25C 0.7 j C Q rr di (I = -11A, / = 100A/s) S dt T = 125C 1.5 j Peak Recovery Current T = 25C 11 j I Amps RRM di (I = -11A, / = 100A/s) S dt T = 125C 16 j THERMAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case 0.45 JC C/W R Junction to Ambient 40 JA 4 1 Repetitive Rating: Pulse width limited by maximum junction Starting T = +25C, L = 20.0mH, R = 25, Peak I = 11A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 11A / 700A/s V 1000V T 150C dt S D R J 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 D=0.5 0.2 0.1 0.1 0.05 0.05 Note: 0.02 0.01 0.01 t 1 0.005 SINGLE PULSE t 2 t 1 Duty Factor D = / t 2 Peak T = P x Z + T J DM JC C 0.001 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5596 Rev C 5-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM