APT10035B2FLL(G) APT10035LFLL(G) 1000V 28A 0.37 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s LFLL patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular T-MAX or TO-264 Package S FAST RECOVERY BODY DIODE MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT10035 UNIT V Drain-Source Voltage 1000 Volts DSS I Continuous Drain Current T = 25C 28 D C Amps 1 I Pulsed Drain Current 112 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 690 Watts C P D Linear Derating Factor 5.5 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 28 Amps AR 1 E 50 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 3000 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 1000 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 28 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 14A) Ohms 0.37 DS(on) GS Zero Gate Voltage Drain Current (V = 1000V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 800V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 2.5mA) Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT10035B2FLL - LFLL DYNAMIC CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT Test Conditions C Input Capacitance V = 0V 5185 iss GS V = 25V C pF Output Capacitance 881 DS oss f = 1 MHz C Reverse Transfer Capacitance 160 rss Q 3 Total Gate Charge V = 10V 186 g GS Q V = 500V nC Gate-Source Charge DD 24 gs I = 28A 25C Q D Gate-Drain Mille) Charge 122 gd RESISTIVE SWITCHING t Turn-on Delay Time 12 d(on) V = 15V GS t 10 Rise Time r V = 500V ns DD t Turn-off Delay Time 36 d(off) I = 28A 25C D t R = 0.6 Fall Time 9 f G INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 900 on V = 670V, V = 15V DD GS E Turn-off Switching Energy I = 28A, R = 5 623 off D G J INDUCTIVE SWITCHING 125C E 6 Turn-on Switching Energy 1423 on V = 670V V = 15V DD GS E Turn-off Switching Energy I = 28A, R = 5 779 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 28 S Amps I 1 SM Pulsed Source Current (Body Diode) 112 V 2 Volts SD Diode Forward Voltage (V = 0V, I = -28A) 1.3 GS S dv / dv 5 V/ns Peak Diode Recovery / 18 dt dt Reverse Recovery Time T = 25C 320 j t ns rr di (I = -28A, / = 100A/s) S dt T = 125C 650 j Reverse Recovery Charge T = 25C 3.60 j C Q rr di (I = -28A, / = 100A/s) S dt T = 125C 9.72 j Peak Recovery Current T = 25C 16.5 j I Amps RRM di (I = -28A, / = 100A/s) S dt T = 125C 24.7 j THERMAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case 0.18 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 7.65mH, R = 25 , Peak I = 28A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 28A / 700A/s V V T 150C dt S D R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 0.9 0.15 0.7 0.10 0.5 Note: t 1 0.3 t 2 0.05 t 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7037 Rev C 2-2009 Z , THERMAL IMPEDANCE (C/W) JC P DM