APT1003RBFLL APT1003RSFLL 1000V 4A 3.00 R POWER MOS 7 FREDFET 3 D PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive 3 G Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package S FAST RECOVERY BODY DIODE MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT1003RBFLL SFLL UNIT V 1000 Volts Drain-Source Voltage DSS I Continuous Drain Current T = 25C 4 D C Amps 1 I Pulsed Drain Current 16 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts 139 C P D Linear Derating Factor W/C 1.11 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps (Repetitive and Non-Repetitive) Avalanche Current 4 AR 1 E Repetitive Avalanche Energy 10 AR mJ 4 E Single Pulse Avalanche Energy 425 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 1000 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, 2A) 3.00 Ohms DS(on) GS Zero Gate Voltage Drain Current (V = 1000V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 800V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT1003RBFLL SFLL Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 694 iss V = 0V GS C pF V = 25V 135 Output Capacitance oss DS C f = 1 MHz Reverse Transfer Capacitance 25 rss Q 3 V = 10V Total Gate Charge 34 g GS V = 500V Q nC DD Gate-Source Charge 5 gs I = 4A 25C D Q Gate-Drain Mille) Charge 22 gd RESISTIVE SWITCHING t Turn-on Delay Time 8 d(on) V = 15V GS t 4 Rise Time r ns V = 500V DD t Turn-off Delay Time 25 d(off) I = 4A 25C D t Fall Time R = 1.6 10 f G INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 13 on V = 667V, V = 15V DD GS E Turn-off Switching Energy I = 4A, R = 5 42 off D G J INDUCTIVE SWITCHING 125C 6 E Turn-on Switching Energy 40 on V = 667V, V = 15V DD GS E Turn-off Switching Energy I = 4A, R = 5 48 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 4 S Amps I 1 SM Pulsed Source Current (Body Diode) 16 2 V Volts SD Diode Forward Voltage (V = 0V, I = -4A) 1.3 GS S dv / dv 5 V/ns Peak Diode Recovery / 18 dt dt Reverse Recovery Time T = 25C 250 j t ns rr di (I = -4A, / = 100A/s) S dt T = 125C 515 j Reverse Recovery Charge T = 25C 0.50 j C Q rr di (I = -4A, / = 100A/s) S dt T = 125C 1.1 j Peak Recovery Current T = 25C 8.3 j I Amps RRM di (I = -4A, / = 100A/s) S dt T = 125C 11.5 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.90 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 53.13mH, R = 25 , Peak I = 4A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 4A / 700A/s V V V T 150C dt S D R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 1.0 0.9 0.80 0.7 0.60 0.5 Note: 0.40 t 1 0.3 t 2 SINGLE PULSE t 0.20 1 Duty Factor D = / t 2 Peak T = P x Z + T 0.1 J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7110 Rev A 1-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM