APT10078BLL APT10078SLL 1000V 14A 0.780 R POWER MOS 7 MOSFET 3 D PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G 3 Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT10078BLL SLL UNIT V 1000 Volts Drain-Source Voltage DSS I Continuous Drain Current T = 25C 14 D C Amps 1 I Pulsed Drain Current 56 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts 403 C P D Linear Derating Factor W/C 3.23 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps (Repetitive and Non-Repetitive) Avalanche Current 14 AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 1300 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 1000 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 7A) 0.780 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 1000V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 800V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT10078BLL SLL Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 2525 iss V = 0V GS C pF V = 25V 430 Output Capacitance oss DS C f = 1 MHz Reverse Transfer Capacitance 75 rss Q 3 V = 10V Total Gate Charge 95 g GS V = 500V Q nC DD Gate-Source Charge 12 gs I = 14A 25C D Q Gate-Drain Mille) Charge 60 gd RESISTIVE SWITCHING t Turn-on Delay Time 9 d(on) V = 15V GS t 8 Rise Time r ns V = 500V DD t Turn-off Delay Time 30 d(off) I = 14A 25C D t Fall Time R = 1.6 9 f G INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 355 on V = 667V, V = 15V DD GS E Turn-off Switching Energy I = 14A, R = 3 75 off D G J INDUCTIVE SWITCHING 125C 6 E Turn-on Switching Energy 740 on V = 667V, V = 15V DD GS E Turn-off Switching Energy I = 14A, R = 3 95 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS MIN TYP MAX Symbol Characteristic / Test Conditions UNIT I 14 Continuous Source Current (Body Diode) S Amps I 1 56 Pulsed Source Current (Body Diode) SM 2 V Diode Forward Voltage (V = 0V, I = -I 14A) 1.3 Volts SD GS S D t 692 Reverse Recovery Time (I = -I 14A, dl /dt = 100A/s) ns rr S D S Q Reverse Recovery Charge (I = -I 14A, dl /dt = 100A/s) 7.87 C rr S D S dv dv 5 V/ns / Peak Diode Recovery / 10 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.31 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 13.27mH, R = 25, Peak I = 14A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I I -14A / 700A/s V 1000 T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 0.9 0.25 0.7 0.20 0.5 0.15 Note: t 1 0.3 0.10 t 2 t 1 0.05 Duty Factor D = / 0.1 t 2 SINGLE PULSE Peak T = P x Z + T 0.05 J DM JC C 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7003 Rev C 4-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM