APT106N60B2 LC6 APT106N60B2 LC6 600V 106A 0.035 APT106N60B2C6 COOL MOS Super Junction MOSFET Power Semiconductors T-Max TO-264 Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche Energy Rated APT106N60LC6 dv Extreme / Rated dt D Dual die (parallel) Popular T-MAX and TO-264 Packages G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS All Ratings per die: T = 25C unless otherwise specified . C Symbol Parameter APT106N60B2 LC6 UNIT Drain-Source Voltage 600 Volts V DSS 1 106 Continuous Drain Current T = 25C C I D 68 Amps Continuous Drain Current T = 100C C 2 318 I Pulsed Drain Current DM Gate-Source Voltage Continuous 20 Volts V GS 833 Watts P Total Power Dissipation T = 25C D C Operating and Storage Junction Temperature Range -55 - to 150 T ,T J STG C Lead Temperature: 0.063 from Case for 10 Sec. 260 T L 2 18.6 Amps I Avalanche Current AR 3 3.4 E Repetitive Avalanche Energy ( Id = 18.6A, Vdd = 50V ) AR Single Pulse Avalanche Energy ( Id = 18.6A, Vdd = 50V ) 2200 mJ E AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT 650 Volts BV Drain-Source Breakdown Voltage (V = 0V, I = 500A) (DSS) GS D 4 0.035 Ohms R Drain-Source On-State Resistance (V = 10V, I = 53A) DS(on) GS D 50 Zero Gate Voltage Drain Current (V = 600V, V = 0V) DS GS A I DSS 500 Zero Gate Voltage Drain Current (V = 600V, V = 0V, T = 150C) DS GS C 200 nA I Gate-Source Leakage Current (V = 20V, V = 0V) GSS GS DS 2.5 3 3.5 Volts V Gate Threshold Voltage (V = V , I = 3.4mA) GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.COOLMOS comprise a new family of transistors developed by Infineon Technologies AG.COOLMO is a trade- mark of Infineon Technologies AG Microsemi Website - DYNAMIC CHARACTERISTICS APT106N60B2 LC6 Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 8390 iss V = 0V GS V = 25V pF C Output Capacitance 7115 DS oss f = 1 MHz C Reverse Transfer Capacitance 229 rss 5 Q Total Gate Charge 308 g V = 10V GS V = 300V nC Q Gate-Source Charge 50 DD gs I = 106A 25C D Q Gate-Drain Mille) Charge 160 gd t Turn-on Delay Time 25 INDUCTIVE SWITCHING d(on) V = 15V GS t Rise Time 79 r V = 400V ns DD t Turn-off Delay Time 277 I = 106A 25C d(off) D R = 4.3 t Fall Time 164 G f 6 INDUCTIVE SWITCHING 25C E Turn-on Switching Energy 2995 on V = 400V, V = 15V DD GS E Turn-off Switching Energy 3775 I = 106A, R = 4.3 off D G J 6 E Turn-on Switching Energy 4055 INDUCTIVE SWITCHING 125C on V = 400V, V = 15V DD GS E Turn-off Switching Energy 4200 off I =106A, R = 4.3 D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 92 S Amps 2 I Pulsed Source Current (Body Diode) 318 SM 4 V Diode Forward Voltage (V = 0V, I = -106A) 0.9 1.2 Volts SD GS S dv dv 7 / Peak Diode Recovery / 15 V/ns dt dt di t Reverse Recovery Time (I = -106A, / = 100A/s) T 1400 ns = 25C rr S dt j di Q Reverse Recovery Charge (I = -106A, / = 100A/s) T 45 C = 25C rr S dt j di I Peak Recovery Current (I = -106A, / = 100A/s) T 47 Amps = 25C RRM S dt j THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.15 C/W JC R Junction to Ambient 40 JA 0.22 oz W Package Weight T 6.2 g 10 inlbf Torque Mounting Torque (TO-264 Package), 4-40 or M3 screw 1.1 Nm 4 Pulse Test: P 1 Continuous current limited by package lead temperature. 5 See MIL-STD-750 Method 3471 2 Repetitive Rating: Pulse width limited by maximum junction temperature 6 Eon includes diode reverse recovery. 3 Repetitive avalanche causes additional power losses that can be calculated as P = E *f . Pulse width tp limited by Tj max. 7 Maximum 125C diode commutation speed = di/dt 600A/s AV AR Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.16 D = 0.9 0.14 0.12 0.7 0.10 0.5 0.08 Note: 0.06 t 1 0.3 t 0.04 2 t 1 t Duty Factor D = / 0.1 2 0.02 Peak T = P x Z + T SINGLE PULSE J DM JC C 0.05 0 -5 -4 -3 -2 10 10 10 10 0.1 1 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 050-7208 Rev B 6-2014 Z , THERMAL IMPEDANCE (C/W) JC P DM