APT1201R2BFLL(G) APT1201R2SFLL(G) 1200V 12A 1.25 R BFLL POWER MOS 7 FREDFET 3 D PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g SFLL along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G 3 Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT1201R2BFLL SFLL UNIT V Drain-Source Voltage 1200 Volts DSS I Continuous Drain Current T = 25C 12 D C Amps 1 I Pulsed Drain Current 48 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts C 403 P D Linear Derating Factor W/C 3.23 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 12 AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 1300 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 1200 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 6A) 1.25 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 1200V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 960V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 1mA) Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT1201R2BFLL SFLL Symbol Test Conditions MIN TYP MAX Characteristic UNIT C Input Capacitance 2540 iss V = 0V GS C pF V = 25V Output Capacitance 365 oss DS f = 1 MHz C Reverse Transfer Capacitance 70 rss Q 3 V = 10V Total Gate Charge 100 g GS V = 600V Q nC Gate-Source Charge DD 14 gs I = 12A 25C D Q Gate-Drain Mille) Charge 65 gd RESISTIVE SWITCHING t 8 Turn-on Delay Time d(on) V = 15V GS t 18 Rise Time r ns V = 600V DD t 29 Turn-off Delay Time d(off) I = 12A 25C D t Fall Time R = 1.6 21 f G INDUCTIVE SWITCHING 25C 6 E 465 Turn-on Switching Energy on V = 800V, V = 15V DD GS E Turn-off Switching Energy I = 12A, R = 5 100 off D G J INDUCTIVE SWITCHING 125C 6 E Turn-on Switching Energy 935 on V = 800V, V = 15V DD GS E Turn-off Switching Energy I = 12A, R = 5 135 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 12 S Amps 1 I Pulsed Source Current (Body Diode) SM 48 2 V Diode Forward Voltage (V = 0V, I = -12A) Volts 1.3 SD GS S dv dv 5 / Peak Diode Recovery / V/ns 18 dt dt Reverse Recovery Time T = 25C 210 j t ns rr di (I = -12A, / = 100A/s) S dt T = 125C 710 j T = 25C 1.0 Reverse Recovery Charge j C Q rr di (I = -12A, / = 100A/s) T = 125C 3.6 S dt j T = 25C 10 j Peak Recovery Current I Amps RRM di (I = -12A, / = 100A/s) T = 125C 14 j S dt THERMAL CHARACTERISTICS UNIT Symbol Characteristic MIN TYP MAX R Junction to Case 0.31 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 18.06mH, R = 25, Peak I = 12A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I I -12A / 700A/s V 1200 T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 0.9 0.25 0.7 0.20 0.5 0.15 Note: t 1 0.3 0.10 t 2 t 1 0.05 Duty Factor D = / 0.1 t SINGLE PULSE 2 Peak T = P x Z + T 0.05 J DM JC C 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7393 Rev C 2-2009 Z , THERMAL IMPEDANCE (C/W) JC P DM