APT1201R4BFLL(G) APT1201R4SFLL(G) 1200V 9A 1.50 R POWER MOS 7 FREDFET 3 D PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with Microsem s patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G 3 Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT1201R4B SFLL UNIT V Drain-Source Voltage 1200 Volts DSS I Continuous Drain Current T = 25C 9 D C Amps 1 I Pulsed Drain Current 36 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 300 C P D Linear Derating Factor W/C 2.40 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 9 AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 1210 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 1200 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 4.5A) 1.50 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 1200V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 960V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts 35 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT1201R4B SFLL Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance V = 0V 2030 iss GS V = 25V C pF Output Capacitance DS 310 oss f = 1 MHz C Reverse Transfer Capacitance 60 rss Q 3 Total Gate Charge V = 10V 75 g GS Q V = 600V nC Gate-Source Charge DD 10 gs I = 9A 25C Q D Gate-Drain Mille) Charge 50 gd RESISTIVE SWITCHING t Turn-on Delay Time 8 d(on) V = 15V GS t 5 Rise Time r V = 600V ns DD t Turn-off Delay Time 27 d(off) I = 9A 25C D t R = 1.6 Fall Time 11 f G INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 500 on V = 800V, V = 15V DD GS E Turn-off Switching Energy I = 9A, R = 5 XX off D G J INDUCTIVE SWITCHING 125C E 6 Turn-on Switching Energy 545 on V = 800V, V = 15V DD GS E 18 Turn-off Switching Energy I = 9A, R = 4.3 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) S 9 Amps I 1 Pulsed Source Current (Body Diode) SM 36 2 V Diode Forward Voltage (V = 0V, I = -I 9A) Volts SD 1.3 GS S D dv dv 5 / Peak Diode Recovery / V/ns dt 18 dt Reverse Recovery Time T = 25C 210 j t rr ns di (I = -I 9A, / = 100A/s) S D dt T = 125C 710 j Reverse Recovery Charge T = 25C 0.7 j C Q rr di (I = -I 9A, / = 100A/s) T = 125C 2.0 S D dt j T = 25C 10 j Peak Recovery Current I Amps RRM di (I = -I 9A, / = 100A/s) T = 125C 15 S D dt j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT Junction to Case R 0.42 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 29.9mH, R = 25, Peak I = 9A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 9A / 700A/s V 1200 T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.45 0.40 0.9 0.35 0.7 0.30 0.25 0.5 Note: 0.20 t 1 0.15 0.3 t 2 0.10 t 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T 0.05 J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7392 Rev C 2-2009 Z , THERMAL IMPEDANCE (C/W) JC P DM