APT1201R6BVFR APT1201R6SVFR 1200V 8A 1.600 BVFR POWER MOS V FREDFET TO-247 3 D PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVFR Faster Switching Avalanche Energy Rated D Lower Leakage FAST RECOVERY BODY DIODE 3 G TO-247 or Surface Mount D PAK Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT1201R6BVFR SVFR UNIT V Drain-Source Voltage 1200 Volts DSS I Continuous Drain Current T = 25C 8 D C Amps 1 I Pulsed Drain Current 32 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 280 Watts C P D Linear Derating Factor 2.24 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 8 Amps AR 1 E 30 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 1210 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) Volts 1200 DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 8 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, I = 4A) Ohms 1.600 DS(on) GS D Zero Gate Voltage Drain Current (V = 1200V, V = 0V) 250 DS GS I A DSS = 960V, V = 0V, T = 125C) Zero Gate Voltage Drain Current (V 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 1.0mA) Volts 24 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT1201R6BVFR SVFR Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 3050 3660 iss V = 0V GS C Output Capacitance 255 360 pF V = 25V oss DS C f = 1 MHz Reverse Transfer Capacitance 125 190 rss 3 Q Total Gate Charge V = 10V 155 230 g GS V = 0.5 V Q nC Gate-Source Charge 15 23 gs DD DSS I = I Cont. 25C Q Gate-Drain Mille) Charge D D 78 115 gd t (on) Turn-on Delay Time 12 24 d V = 15V GS t V = 0.5 V Rise Time 10 20 r DD DSS ns I = I Cont. 25C t (off) Turn-off Delay Time 50 75 d D D R = 1.6 t G Fall Time 15 30 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT Continuous Source Current (Body Diode) 8 I S Amps 1 I Pulsed Source Current (Body Diode) 32 SM 2 V Diode Forward Voltage (V = 0V, I = -I Cont. ) 1.3 Volts SD GS S D dv dv 5 Peak Diode Recovery / 18 V/ns / dt dt Reverse Recovery Time T = 25C 220 j t ns rr di (I = -I Cont. , / = 100A/s) S D dt T = 125C 450 j Reverse Recovery Charge T = 25C 1.0 j Q C rr di (I = -I Cont. , / = 100A/s) S D dt T = 125C 3.0 j Peak Recovery Current T = 25C 10 j I Amps RRM di (I = -I Cont. , / = 100A/s) S D dt T = 125C 14 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.45 JC C/W R Junction to Ambient 40 JA 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 37.81mH, R = 25, Peak I = 8A j G L 2 5dv Pulse Test: Pulse width < 380 S, Duty Cycle < 2% / numbers reflect the limitations of the test circuit rather than the dt di device itself. I I -8A / 700A/s V 1200V T 150C dt S D R J APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 D=0.5 0.2 0.1 0.1 0.05 0.05 Note: 0.02 0.01 0.01 t 1 0.005 SINGLE PULSE t 2 t 1 Duty Factor D = / t 2 Peak T = P x Z + T J DM JC C 0.001 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5849 Rev A 6-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM