APT12057B2LL(G) APT12057LLL(G) 1200V 22A 0.570 R B2LL POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s LLL patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular T-MAX or TO-264 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT12057(G) UNIT V Drain-Source Voltage 1200 Volts DSS I Continuous Drain Current T = 25C 22 D C Amps 1 I Pulsed Drain Current 88 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 690 Watts C P D Linear Derating Factor W/C 5.52 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 22 Amps AR 1 E 50 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 3000 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 1200 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 22 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 0.5 I ) Ohms 0.570 DS(on) GS D Cont. Zero Gate Voltage Drain Current (V = V , V = 0V) 100 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 500 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 2.5mA) 35 Volts GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT12057 B2LL - LLL(G) DYNAMIC CHARACTERISTICS MIN TYP MAX UNIT Symbol Characteristic Test Conditions C Input Capacitance 5155 6200 V = 0V iss GS C Output Capacitance V = 25V 770 1080 pF oss DS C f = 1 MHz Reverse Transfer Capacitance 130 200 rss Q 3 Total Gate Charge V = 10V 187 290 g GS V = 0.5 V Q nC Gate-Source Charge 24 29 DD DSS gs I = I 25C Q Gate-Drain Mille) Charge D D Cont. 120 180 gd t Turn-on Delay Time V = 15V 11 22 d(on) GS t V = 0.5 V Rise Time 20 40 r DD DSS ns I = I 25C t Turn-off Delay Time 36 54 D D Cont. d(off) R = 0.6 t G Fall Time 21 30 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 22 S Amps 1 I Pulsed Source Current (Body Diode) 88 SM 2 V Diode Forward Voltage (V = 0V, I = -I ) 1.3 Volts SD GS S D Cont. t Reverse Recovery Time (I = -I , dl /dt = 100A/s) 1291 ns rr S D Cont. S Q Reverse Recovery Charge (I = -I , dl /dt = 100A/s) 29 C rr S D Cont. S dv dv 5 / V/ns Peak Diode Recovery / 10 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.18 JC C/W R Junction to Ambient 40 JA 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 12.40mH, R = 25 , Peak I = 22A j G L 2 5dv Pulse Test: Pulse width < 380 s, Duty Cycle < 2% / numbers reflect the limitations of the test circuit rather than the dt di device itself. I -I / 700A/s V V T 150C dt S D Cont. R DSS J APT Reserves the right to change, without notice, the specifications and information contained herein. 0.2 D=0.5 0.1 0.05 0.2 0.1 0.05 Note: 0.01 t 1 0.02 0.005 t 2 0.01 t 1 Duty Factor D = / t 2 SINGLE PULSE Peak T = P x Z + T J DM JC C 0.001 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7082 Rev B 8-2002 Z , THERMAL IMPEDANCE (C/W) JC P DM