APT12060B2VFR APT12060LVFR 1200V 20A 0.600 POWER MOS V T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching Avalanche Energy Rated D FREDFET Lower Leakage Popular T-MAX or TO-264 G Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT12060B2VFR LVFR UNIT V Drain-Source Voltage 1200 Volts DSS I Continuous Drain Current T = 25C 20 D C Amps 1 I Pulsed Drain Current 80 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts C 625 P D Linear Derating Factor W/C 5.00 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 20 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3000 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 1200 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 10A) 0.600 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 1200, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 960V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts 24 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT12060B2VFR LVFR Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 7545 9500 iss V = 0V GS 650 980 C Output Capacitance V = 25V pF oss DS C f = 1 MHz 350 490 Reverse Transfer Capacitance rss 3 431 650 Q Total Gate Charge V = 10V g GS V = 0.5 V Q 34 41 nC Gate-Source Charge DD DSS gs I = I Cont. 25C Q 210 320 Gate-Drain Mille) Charge D D gd t (on) 13 26 Turn-on Delay Time d V = 15V GS t V = 0.5 V 12 24 Rise Time r DD DSS ns I = I Cont. 25C t (off) 63 95 Turn-off Delay Time d D D R = 0.6 t G 12 25 f Fall Time SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 20 S Amps 1 I Pulsed Source Current (Body Diode) 80 SM 2 V Diode Forward Voltage (V = 0V, I = -I Cont. ) 1.3 Volts SD GS S D dv dv 5 Peak Diode Recovery / 18 V/ns / dt dt Reverse Recovery Time T = 25C 320 j t ns rr di (I = -I Cont. , / = 100A/s) S D dt T = 125C 650 j Reverse Recovery Charge T = 25C 3 j Q C rr di (I = -I Cont. , / = 100A/s) S D dt T = 125C 9 j Peak Recovery Current T = 25C 15 j I Amps RRM di (I = -I Cont. , / = 100A/s) S D dt T = 125C 25 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.20 JC C/W R Junction to Ambient 40 JA 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 15mH, R = 25, Peak I = 20A j G L 2 5 di Pulse Test: Pulse width < 380 S, Duty Cycle < 2% I I Cont. , / = 100A/s, T 150C, R = 2.0 V = 200V. S D j G R dt APT Reserves the right to change, without notice, the specifications and information contained herein. 0.2 0.1 D=0.5 0.05 0.2 0.1 0.05 0.01 Note: t 1 0.02 0.005 t 2 0.01 SINGLE PULSE t 1 Duty Factor D = / t 2 Peak T = P x Z + T J DM JC C 0.001 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5845 Rev A 4-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM