TO-247 APT17F100B APT17F100S 1000V, 17A, 0.78 Max, t 245ns rr N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. 3 D PAK This FREDFET version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft rr recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C /C result in excellent noise immunity and low switching loss. The rss iss APT17F100B APT17F100S intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching Single die FREDFET at very high frequency. FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Low t for high reliability Half bridge rr Ultra low C for improved noise immunity PFC and other boost converter rss Low gate charge Buck converter Avalanche energy rated Single and two switch forward RoHS compliant Flyback Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current T = 25C 17 C I D Continuous Drain Current T = 100C 11 A C 1 I Pulsed Drain Current 70 DM V Gate-Source Voltage 30 V GS E 2 1070 Single Pulse Avalanche Energy mJ AS I 9 AR Avalanche Current, Repetitive or Non-Repetitive A Thermal and Mechanical Characteristics Min Typ Max Unit Symbol Characteristic P Total Power Dissipation T = 25C 625 W D C R 0.20 Junction to Case Thermal Resistance JC C/W R 0.11 Case to Sink Thermal Resistance, Flat, Greased Surface CS T ,T Operating and Storage Junction Temperature Range -55 150 J STG C T Soldering Temperature for 10 Seconds (1.6mm from case) 300 L oz 0.22 W Package Weight T g 5.9 inlbf 10 Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw 1.1 Nm Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT17F100B S J Symbol Parameter Min Typ Max Unit Test Conditions V Drain-Source Breakdown Voltage V = 0V, I = 250A 1000 V BR(DSS) GS D V /T Breakdown Voltage Temperature Coef cient Reference to 25C, I = 250A 1.15 V/C BR(DSS) J D R 3 V = 10V, I = 9A Drain-Source On Resistance 0.67 0.78 DS(on) GS D V Gate-Source Threshold Voltage 2.5 4 5 V GS(th) V = V , I = 1mA V /T GS DS D Threshold Voltage Temperature Coef cient -10 mV/C GS(th) J V = 1000V T = 25C 250 DS J I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 1000 GS J I Gate-Source Leakage Current V = 30V 100 nA GSS GS Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit g V = 50V, I = 9A fs Forward Transconductance 19 S DS D C Input Capacitance 4845 iss V = 0V, V = 25V GS DS C Reverse Transfer Capacitance 65 rss f = 1MHz C Output Capacitance 405 oss pF 4 C Effective Output Capacitance, Charge Related 165 o(cr) V = 0V, V = 0V to 667V GS DS 5 C Effective Output Capacitance, Energy Related 85 o(er) Q Total Gate Charge 150 g V = 0 to 10V, I = 9A, GS D Q Gate-Source Charge nC gs 26 V = 500V DS Q Gate-Drain Charge gd 70 t Resistive Switching Turn-On Delay Time d(on) 29 t V = 667V, I = 9A Current Rise Time 31 r DD D ns 6 t R = 4.7 , V = 15V Turn-Off Delay Time 105 d(off) G GG t Current Fall Time 28 f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current MOSFET symbol I S 17 showing the (Body Diode) integral reverse p-n A Pulsed Source Current junction diode I 65 SM (body diode) 1 (Body Diode) V I = 9A, T = 25C, V = 0V Diode Forward Voltage 1. 2 V SD SD J GS T = 25C 215 245 J t Reverse Recovery Time ns rr T = 125C 385 465 J 3 I = 9A T = 25C 1.02 SD J Q Reverse Recovery Charge C rr di /dt = 100A/s T = 125C 2.57 SD J V = 100V T = 25C 9.03 DD J I Reverse Recovery Current A rrm T = 125C 12.83 J I 9A, di/dt 1000A/s, V = 400V, SD DD dv/dt Peak Recovery dv/dt V/ns 25 T = 125C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 26.42mH, R = 25, I = 9A. J G AS 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 C is de ned as a xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is de ned as a xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -1.41E-8/V 2 + 2.48E-9/V + 4.81E-11. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-8159 Rev D 8-2011