TO-247 APT18F60B APT18F60S 600V, 19A, 0.37 Max, t 200ns rr N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. 3 D PAK This FREDFET version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft rr recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C /C result in excellent noise immunity and low switching loss. The rss iss APT18F60B APT18F60S intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching Single die FREDFET at very high frequency. FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Low t for high reliability Half bridge rr Ultra low C for improved noise immunity PFC and other boost converter rss Low gate charge Buck converter Avalanche energy rated Single and two switch forward RoHS compliant Flyback Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current T = 25C 19 C I D Continuous Drain Current T = 100C 12 A C 1 I Pulsed Drain Current 65 DM V Gate-Source Voltage 30 V GS E 2 495 Single Pulse Avalanche Energy mJ AS I 9 AR Avalanche Current, Repetitive or Non-Repetitive A Thermal and Mechanical Characteristics Min Typ Max Unit Symbol Characteristic P Total Power Dissipation T = 25C 335 W D C R 0.37 Junction to Case Thermal Resistance JC C/W R 0.15 Case to Sink Thermal Resistance, Flat, Greased Surface CS T ,T Operating and Storage Junction Temperature Range -55 150 J STG C T Soldering Temperature for 10 Seconds (1.6mm from case) 300 L oz 0.22 W Package Weight T g 6.2 inlbf 10 Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw 1.1 Nm Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT18F60B S J Test Conditions Symbol Parameter Min Typ Max Unit V = 0V, I = 250A V Drain-Source Breakdown Voltage GS D 600 V BR(DSS) Reference to 25C, I = 250A V /T Breakdown Voltage Temperature Coef cient D 0.57 V/C BR(DSS) J V = 10V, I = 9A R 3 GS D Drain-Source On Resistance .31 0.37 DS(on) V Gate-Source Threshold Voltage 2.5 4 5 V GS(th) V = V , I = 1mA GS DS D V /T Threshold Voltage Temperature Coef cient -10 mV/C GS(th) J V = 600V T = 25C DS J 250 I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C GS J 1000 V = 30V I Gate-Source Leakage Current GS 100 nA GSS Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit g V = 50V, I = 9A fs Forward Transconductance 17 S DS D C Input Capacitance 3550 iss V = 0V, V = 25V GS DS C Reverse Transfer Capacitance 36 rss f = 1MHz C Output Capacitance 325 oss pF 4 C Effective Output Capacitance, Charge Related 175 o(cr) V = 0V, V = 0V to 400V GS DS 5 C Effective Output Capacitance, Energy Related 90 o(er) Q Total Gate Charge 90 g V = 0 to 10V, I = 9A, GS D Q Gate-Source Charge 19 nC gs V = 300V DS Q Gate-Drain Charge gd 37 t Resistive Switching Turn-On Delay Time 20 d(on) t V = 400V, I = 9A Current Rise Time 23 r DD D ns 6 t R = 4.7 , V = 15V Turn-Off Delay Time 60 d(off) G GG t Current Fall Time 18 f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current MOSFET symbol I S 19 showing the (Body Diode) integral reverse p-n A Pulsed Source Current junction diode I 65 SM (body diode) 1 (Body Diode) V I = 9A, T = 25C, V = 0V Diode Forward Voltage 1.2 V SD SD J GS T = 25C 175 200 J t Reverse Recovery Time ns rr T = 125C 315 380 J 3 I = 9A T = 25C 0.65 SD J Q Reverse Recovery Charge C rr di /dt = 100A/s T = 125C 1.56 SD J V = 100V T = 25C 6.7 DD J I Reverse Recovery Current A rrm T = 125C 9.2 J I 9A, di/dt 1000A/s, V = 400V, SD DD dv/dt Peak Recovery dv/dt V/ns 20 T = 125C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 12.2mH, R = 25, I = 9A. J G AS 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 C is de ned as a xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is de ned as a xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -3.43E-8/V 2 + 1.44E-8/V + 5.38E-11. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-8158 Rev D 8-2011