APT20M16B2FLL APT20M16LFLL 200V 100A 0.016 R B2FLL POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s LFLL patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular T-MAX or TO-264 Package FAST RECOVERY BODY DIODE S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT20M16B2FLL LFLL UNIT V Drain-Source Voltage 200 Volts DSS 7 I Continuous Drain Current T = 25C 100 D C Amps 1 I Pulsed Drain Current 400 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 694 C P D Linear Derating Factor W/C 5.56 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 100 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3000 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 200 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 50A) 0.016 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 200V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 160V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 2.5mA) V Volts 35 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT20M16 B2FLL LFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance V = 0V 7220 iss GS V = 25V C pF Output Capacitance 2330 DS oss f = 1 MHz C Reverse Transfer Capacitance 145 rss Q 3 V = 10V Total Gate Charge 140 g GS = 100V Q V nC Gate-Source Charge DD 65 gs = 100A 25C I Q D 120 Gate-Drain Mille) Charge gd RESISTIVE SWITCHING t Turn-on Delay Time 15 d(on) V = 15V GS t 31 Rise Time r V = 100V ns DD t Turn-off Delay Time 29 d(off) I = 100A 25C D t R = 0.6 Fall Time 4 f G INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 850 on V = 133V, V = 15V DD GS E Turn-off Switching Energy I = 100A, R = 5 930 off D G J INDUCTIVE SWITCHING 125C E 6 Turn-on Switching Energy 935 on V = 133V, V = 15V DD GS E Turn-off Switching Energy I = 100A, R = 5 985 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I S Continuous Source Current (Body Diode) 100 Amps I 1 SM Pulsed Source Current (Body Diode) 400 V 2 Diode Forward Voltage (V = 0V, I = -100A) 1.3 Volts SD GS S dv / dv 5 V/ns Peak Diode Recovery / 8 dt dt Reverse Recovery Time T = 25C 230 j t ns rr di (I = -100A, / = 100A/s) S dt T = 125C 450 j Reverse Recovery Charge T = 25C 0.9 j C Q rr di (I = -100A, / = 100A/s) S dt T = 125C 3.4 j Peak Recovery Current T = 25C 11 j I Amps RRM di (I = -100A, / = 100A/s) S dt T = 125C 20 j THERMAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case 0.18 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 0.60mH, R = 25, Peak I = 100A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 100A / 700A/s V 200V T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. 7 The maximum current is limited by lead temperature APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 0.9 0.16 0.7 0.12 0.5 Note: 0.08 t 1 0.3 t 2 t 0.04 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7044 Rev C 5-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM