APT20M16B2LL APT20M16LLL 200V 100A 0.016 R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g LLL along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular T-MAX or TO-264 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT20M16B2LL LLL UNIT V Drain-Source Voltage 200 Volts DSS 7 I Continuous Drain Current T = 25C 100 D C Amps 1 I Pulsed Drain Current 400 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 694 C P D Linear Derating Factor W/C 5.56 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 100 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3000 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 200 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 50A) 0.016 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 200V, V = 0V) 100 DS GS I A DSS = 160V, V = 0V, T = 125C) Zero Gate Voltage Drain Current (V 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 2.5mA) V Volts 35 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT20M16 B2LL LLL Test Conditions Characteristic MIN TYP MAX Symbol UNIT C Input Capacitance 7220 iss V = 0V GS C Output Capacitance V = 25V 2330 oss DS pF f = 1 MHz C Reverse Transfer Capacitance 145 rss Q 3 Total Gate Charge V = 10V 140 g GS V = 100V Q DD Gate-Source Charge 65 gs nC I = 100A 25C D Q Gate-Drain Mille) Charge 120 gd RESISTIVE SWITCHING t Turn-on Delay Time 15 d(on) V = 15V GS t Rise Time 31 r V = 100V DD ns I = 100A 25C t 29 Turn-off Delay Time D d(off) R = 0.6 G t Fall Time 4 f INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 850 on = 133V, V = 15V V DD GS = 100A, R = 5 E I Turn-off Switching Energy 930 D G off INDUCTIVE SWITCHING 125C J E 6 Turn-on Switching Energy 935 on V = 133V, V = 15V DD GS E I = 100A, R = 5 Turn-off Switching Energy 985 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS MIN TYP MAX Symbol Characteristic / Test Conditions UNIT I 100 Continuous Source Current (Body Diode) S Amps I 1 400 Pulsed Source Current (Body Diode) SM 2 V Diode Forward Voltage (V = 0V, I = -I 100A) 1.3 Volts SD GS S D t Reverse Recovery Time (I = -I 100A, dl /dt = 100A/s) 360 ns rr S D S Q Reverse Recovery Charge (I = -I 100A, dl /dt = 100A/s) C 6.7 rr S D S dv dv 5 V/ns / Peak Diode Recovery / 5 dt dt THERMAL CHARACTERISTICS Symbol UNIT Characteristic MIN TYP MAX R Junction to Case 0.18 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 0.60mH, R = 25, Peak I = 100A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 100A / 700A/s V 200V T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. 7 The maximum current is limited by lead temperature APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 0.9 0.16 0.7 0.12 0.5 Note: 0.08 t 1 0.3 t 2 t 0.04 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7014 Rev C 6-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM