FINAL DATA SHEET WITH MOS 7 FORMAT APT20M18B2VFR A20M18LVFR 200V 100A 0.018 POWER MOS V FREDFET B2VFR T-Max Power MOS V is a new generation of high voltage N-Channel enhance- TO-264 ment mode power MOSFETs. This new technology minimizes the JFET ef- fect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR T-MAX or TO-264 Package Avalanche Energy Rated D Faster Switching FAST RECOVERY BODY DIODE G Lower Leakage S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT20M18B2VFR LVFR UNIT V Drain-Source Voltage Volts 200 DSS 6 I 100 Continuous Drain Current T = 25C D C Amps 1 I 400 Pulsed Drain Current DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Watts Total Power Dissipation T = 25C 625 C P D Linear Derating Factor W/C 5.00 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps 100 Avalanche Current (Repetitive and Non-Repetitive) AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3000 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 200 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 15V, I = 50A) Ohms 0.018 DS(on) GS D Zero Gate Voltage Drain Current (V = 200V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 160V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 2.5mA) Volts V 2 4 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - FINAL DATA SHEET WITH MOS 7 FORMAT DYNAMIC CHARACTERISTICS APT20M18B2VFR LVFR MIN TYP MAX UNIT Symbol Characteristic Test Conditions C Input Capacitance 9880 V = 0V iss GS C Output Capacitance 2320 V = 25V pF oss DS f = 1 MHz C Reverse Transfer Capacitance 700 rss 3 Q 330 V = 10V Total Gate Charge g GS V = 150V Q 55 nC Gate-Source Charge DD gs I = 100A 25C Q Gate-Drain Mille) Charge 145 D gd t Turn-on Delay Time 18 V = 15V d(on) GS t Rise Time V = 150V 27 r DD ns I = 100A 25C t Turn-off Delay Time 55 D d(off) R = 0.6 t Fall Time G 6 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX I Continuous Source Current (Body Diode) 100 S Amps 1 I Pulsed Source Current (Body Diode) 400 SM 2 V Volts Diode Forward Voltage (V = 0V, I = -100A) 1.3 SD GS S dv dv 5 / V/ns Peak Diode Recovery / 8 dt dt Reverse Recovery Time T = 25C 230 j t ns di rr (I = -100A, / = 100A/s) S dt T = 125C 450 j Reverse Recovery Charge T = 25C 0.9 j C Q di rr (I = -100A, / = 100A/s) T = 125C 3.4 S dt j T = 25C 11 Peak Recovery Current j Amps I di RRM (I = -100A, / = 100A/s) T = 125C 20 S dt j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT Junction to Case 0.20 R JC C/W Junction to Ambient 40 R JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 600H, R = 25, Peak I = 100A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 100A / 200A/s V 200V T 150C S D R J dt 6 3 See MIL-STD-750 Method 3471 The maximum current is limited by lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.9 0.20 0.15 0.7 0.5 Note: 0.10 t 1 0.3 t 2 0.05 t 1 t Duty Factor D = / 2 0.1 Peak T = P x Z + T SINGLE PULSE J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5906 Rev B 6-2015 Z , THERMAL IMPEDANCE (C/W) JC P DM