APT20M18B2VR A20M18LVR 200V 100A 0.018 POWER MOS V MOSFET B2VR Power MOS V is a new generation of high voltage N-Channel enhance- T-Max TO-264 ment mode power MOSFETs. This new technology minimizes the JFET ef- fect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR TO-264 MAX Package Avalanche Energy Rated D Faster Switching Lower Leakage G S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT20M18B2VR LVR UNIT V Drain-Source Voltage Volts 200 DSS 6 I 100 Continuous Drain Current T = 25C D C Amps 1 I 400 Pulsed Drain Current DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Watts Total Power Dissipation T = 25C 625 C P D Linear Derating Factor W/C 5.00 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps 100 Avalanche Current (Repetitive and Non-Repetitive) AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3000 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 200 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 15V, I = 50A) Ohms 0.018 DS(on) GS D Zero Gate Voltage Drain Current (V = 200V, V = 0V) 25 DS GS I A DSS Zero Gate Voltage Drain Current (V = 160V, V = 0V, T = 125C) 250 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 2.5mA) Volts V 2 4 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT20M18B2VR LVR Symbol MIN TYP MAX UNIT Characteristic Test Conditions C Input Capacitance 9880 V = 0V iss GS C Output Capacitance 2320 pF V = 25V oss DS f = 1 MHz C Reverse Transfer Capacitance 700 rss 3 Q 330 Total Gate Charge V = 10V g GS Q V = 150V Gate-Source Charge 55 nC gs DD I = 100A 25C Q Gate-Drain Mille) Charge D 145 gd t Turn-on Delay Time 18 V = 15V d(on) GS t Rise Time V = 150V 27 r DD ns I = 100A 25C t Turn-off Delay Time 55 D d(off) R = 0.6 t Fall Time G 6 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 100 S Amps 1 I 400 Pulsed Source Current (Body Diode) SM 2 Volts V Diode Forward Voltage (V = 0V, I = -49A) 1.3 SD GS S ns t Reverse Recovery Time (I = -49A, dl /dt = 100A/s) 360 rr S S C Q Reverse Recovery Charge (I = -49A, dl /dt = 100A/s) 6.7 rr S S dv dv 5 V/ns / Peak Diode Recovery / 5 dt dt THERMAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case 0.20 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 600H, R = 25, Peak I = 100A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 100A / 200A/s V 200V T 150C S D dt R J 6 3 See MIL-STD-750 Method 3471 The maximum current is limited by lead temperature. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.9 0.20 0.15 0.7 Note: 0.5 0.10 t 1 0.3 t 2 0.05 t 1 t Duty Factor D = / 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5910 Rev B 6-2015 Z , THERMAL IMPEDANCE (C/W) JC P DM