APT20M20B2FLL APT20M20LFLL 200V 100A 0.020 R FREDFET POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive Lower Gate Charge, Qg Popular T-MAX or TO-264 Package G FAST RECOVERY BODY DIODE S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT20M20B2FLL LFLL UNIT V Drain-Source Voltage 200 Volts DSS I 5 Continuous Drain Current T = 25C 100 D C Amps 1 I Pulsed Drain Current 400 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts C 568 P D Linear Derating Factor W/C 4.55 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 100 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 2500 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 200 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 50A) 0.020 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 200V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 160V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 2.5mA) Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT20M2B2FLL LFLL Symbol MIN TYP MAX Characteristic Test Conditions UNIT C Input Capacitance V = 0V 6850 iss GS V = 25V C pF Output Capacitance DS 2180 oss f = 1 MHz C Reverse Transfer Capacitance 95 rss Q 3 Total Gate Charge V = 10V 110 g GS V = 100V Q nC Gate-Source Charge DD 43 gs I = 100A 25C D Q Gate-Drain Mille) Charge 47 gd RESISTIVE SWITCHING t 13 Turn-on Delay Time d(on) V = 15V GS t 40 Rise Time r ns V = 100V DD t 26 Turn-off Delay Time d(off) I = 100A 25C D t R = 0.6 Fall Time 2 f G INDUCTIVE SWITCHING 25C 7 E Turn-on Switching Energy 465 on V = 130V, V = 15V DD GS E Turn-off Switching Energy I = 100A, R = 5 455 off D G J INDUCTIVE SWITCHING 125C 7 E Turn-on Switching Energy 920 on V = 130V V = 15V DD GS E Turn-off Switching Energy I = 100A, R = 5 915 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I S Continuous Source Current (Body Diode) 100 Amps I 1 (Body Diode) SM Pulsed Source Current 400 V 2 Volts SD Diode Forward Voltage (V = 0V, I = -100A) 1.3 GS S dv dv 6 / Peak Diode Recovery / V/ns dt 8 dt Reverse Recovery Time T = 25C 220 j t rr ns di (I = -100A, / = 100A/s) S dt T = 125C 420 j Reverse Recovery Charge T = 25C 1.07 j C Q rr di (I = -100A, / = 100A/s) S dt T = 125C 2.9 j Peak Recovery Current T = 25C 12.1 j I Amps RRM di (I = -100A, / = 100A/s) S dt T = 125C 20.6 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.22 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 0.50mH, R = 25, Peak I = 100A j G L temperature 5 The maximum current is limited by lead temperature dv 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 6 / numbers reflect the limitations of the test circuit rather than the dt di 3 See MIL-STD-750 Method 3471 device itself. I -I 75A / 700A/s V V T 150C dt S D R DSS J 7 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.25 0.9 0.20 0.7 0.15 0.5 Note: 0.10 t 1 0.3 t 2 t 0.05 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C 0.05 SINGLE PULSE 0 -5 -4 -3 -2 -1 10 10 10 10 10 1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7046 Rev D 4-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM