TO-247 APT20M45BVR(G) 200V, 56A, 0.045 APT20M45BVR(G) POWER MOS V POWER MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V also achieves 3 D faster switching speeds through optimized gate layout. FEATURES Faster switching Lower Leakage D 100% Avalanche tested G Popular TO-247 Package RoHS compliant S Absolute Maximum Ratings All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter Ratings Unit Drain Source Voltage 200 Volts V DSS I Continuous Drain Current T = 25C 56 D C Amps 1 I Pulsed Drain Current 224 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 300 Watts C P D Linear Derating Factor 2.4 W/C T , T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature for Soldering: 0.063 from Case for 10 Seconds 300 L 1 I Avalanche Current (Repetitive and Non-Repatitive) 56 Amps AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 1300 AS Static Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Min Typ Max Unit BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 200 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) 56 Amps D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 0.5 I ) 0.045 Ohms DS(on) GS D Cont. Zero Gate Voltage Drain Current (V = V , V = 0V) 25 DS DSS GS I A DSS Zero Gate Voltage Collector Current (V = 0.8 V , V = 0V, T = 125C) 250 GS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) 100 nA GSS GS DS V Gate Threshold Voltage (V = V , I = 1.0mA) 2 4 Volts GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - APT20M45BVR(G) Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance V = 0V 4050 4860 iss GS C Output Capacitance V = 25V 980 1375 oss DS pF C Reverse Transfer Capacitance f = 1MHz 300 450 rss 1 Q Total Gate Charge V = 10V 130 195 g GS Q Gate-Source Charge V = 0.5V 30 45 ge DD DSS nC Q Gate- Drain Mille) Charge I = I 25C 55 80 gd D D cont. t Turn-on Delay Time V = 10V 12 24 d(on) GS t Rise Time V = 0.5V 14 28 r DD DSS ns t Turn-off Delay Time 43 70 I = I 25C d(off) D D cont. t Fall Time R = 1.6 714 f G Source-Drain Diode Ratings and Characteristics Symbol Characteristic / Test Conditions Min Typ Max Unit I Continuous Source Current (Body Diode) 56 S Amps 1 I Pulse Source Current (Body Diode) 224 SM 2 V Diode Forward Voltage (V = 0V, I = -I ) 1.3 Volts SD GS S D Cont. t Reverse Recovery Time (I = -I , dI /dt = 100A/s) 280 nS rr S D Cont. S Q Reverse Recovery Time (I = -I , dI /dt = 100A/s) 3.5 C rr) S D Cont. S Thermal Characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case 0.42 JC C /W R Junction to Ambient 40 JA 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 830 H, R = 25 , Peak I = 56A j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% Microsemi Reserves the right to change, without notice, the speci cations and information contained herein. 050-5514 Rev D 3 - 2010