APT24M120B2 APT24M120L 1200V, 24A, 0.63 Max N-Channel MOSFET TM T-Ma x TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low CMille capaci- rss tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, APT24M120B2 APT24M120L even when switching at very high frequency. Reliability in yback, boost, forward, and D other circuits is enhanced by the high avalanche energy capability. Single die MOSFET G S FEATURES TYPICAL APPLICATIONS Fast switching with low EMI/RFI PFC and other boost converter Low R Buck converter DS(on) Ultra low C for improved noise immunity Two switch forward (asymmetrical bridge) rss Low gate charge Single switch forward Avalanche energy rated Flyback RoHS compliant Inverters Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current T = 25C 24 C I D Continuous Drain Current T = 100C 15 A C 1 I Pulsed Drain Current 90 DM V Gate-Source Voltage 30 V GS E 2 1875 Single Pulse Avalanche Energy mJ AS I 12 AR Avalanche Current, Repetitive or Non-Repetitive A Thermal and Mechanical Characteristics Min Typ Max Unit Symbol Characteristic P Total Power Dissipation T = 25C 1040 W D C R 0.12 Junction to Case Thermal Resistance JC C/W R 0.11 Case to Sink Thermal Resistance, Flat, Greased Surface CS T ,T Operating and Storage Junction Temperature Range -55 150 J STG C T Soldering Temperature for 10 Seconds (1.6mm from case) 300 L oz 0.22 W Package Weight T g 6.2 inlbf 10 Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw 1.1 Nm Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT24M120B2 L J Symbol Parameter Test Conditions Min Typ Max Unit V V = 0V, I = 250 A Drain-Source Breakdown Voltage 1200 V BR(DSS) GS D V /T Reference to 25C, I = 250 A Breakdown Voltage Temperature Coef cient 1.41 V/C BR(DSS) J D V = 10V, I = 12A R 3 Drain-Source On Resistance 0.50 0.63 DS(on) GS D V Gate-Source Threshold Voltage 3 4 5 V GS(th) V = V , I = 2.5mA GS DS D V /T Threshold Voltage Temperature Coef cient -10 mV/C GS(th) J V = 1200V T = 25C 100 DS J I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 500 GS J I V = 30V Gate-Source Leakage Current 100 nA GSS GS Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit g V = 50V, I = 12A 27 fs Forward Transconductance S DS D C Input Capacitance 8370 iss V = 0V, V = 25V GS DS C 100 Reverse Transfer Capacitance rss f = 1MHz C Output Capacitance 615 oss pF 4 C Effective Output Capacitance, Charge Related 240 o(cr) V = 0V, V = 0V to 800V GS DS 5 C Effective Output Capacitance, Energy Related 125 o(er) Q Total Gate Charge 260 g V = 0 to 10V, I = 12A, GS D Q Gate-Source Charge 42 nC gs V = 600V DS Q Gate-Drain Charge gd 120 t Resistive Switching Turn-On Delay Time 45 d(on) t V = 800V, I = 12A Current Rise Time 27 r DD D ns 6 t R = 2.2 , V = 15V Turn-Off Delay Time 145 d(off) G GG t Current Fall Time 42 f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current D MOSFET symbol I S 24 showing the (Body Diode) integral reverse p-n A G Pulsed Source Current junction diode I SM 90 (body diode) 1 S (Body Diode) V I = 12A, T = 25C, V = 0V Diode Forward Voltage 1 V SD SD J GS 3 t I = 12A Reverse Recovery Time 1270 ns rr SD Q di /dt = 100A/s, T = 25C Reverse Recovery Charge 30 C rr SD J I 12A, di/dt 1000A/ s, V = 800V, SD DD V/ns dv/dt Peak Recovery dv/dt 10 T = 125C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 26.04mH, R = 2.2, I = 12A. J G AS 3 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 4 C is de ned as a xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is de ned as a xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(cr) V less than V use this equation: C = -3.80E-7/V 2 + 4.62E-8/V + 6.57E-11. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-8072 Rev C 7-2011