TO-247 APT30GP60B APT30GP60S 600V B POWER MOS 7 IGBT 3 D PAK A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for S C very fast switching, making it ideal for high frequency, high voltage switch- G E mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alternative to a Power G C E MOSFET. C Low Conduction Loss 100 kHz operation 400V, 37A G Low Gate Charge 200 kHz operation 400V, 24A Ultrafast Tail Current shutoff SSOA rated E MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter UNIT APT30GP60B S Collector-Emitter Voltage V 600 CES Gate-Emitter Voltage 20 Volts V GE 30 V Gate-Emitter Voltage Transient GEM I 100 Continuous Collector Current T = 25C C1 C I Continuous Collector Current T = 110C 49 Amps C2 C 1 I Pulsed Collector Current T = 25C 120 CM C SSOA Switching Safe Operating Area T = 150C 120A 600V J P 463 Watts Total Power Dissipation D T ,T -55 to 150 Operating and Storage Junction Temperature Range J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Collector-Emitter Breakdown Voltage (V = 0V, I = 250A) 600 CES GE C V Gate Threshold Voltage (V = V , I = 1mA, T = 25C) 3 4.5 6 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 30A, T = 25C) 2.2 2.7 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 30A, T = 125C) 2.1 GE C j 2 Collector Cut-off Current (V = 600V, V = 0V, T = 25C) 250 CE GE j I A CES 2 Collector Cut-off Current (V = 600V, V = 0V, T = 125C) 2500 CE GE j I Gate-Emitter Leakage Current (V = 20V) nA 100 GES GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT30GP60B S DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 3200 Capacitance ies C Output Capacitance V = 0V, V = 25V 295 pF oes GE CE C f = 1 MHz Reverse Transfer Capacitance 20 res V Gate-to-Emitter Plateau Voltage 7.5 V GEP Gate Charge 3 Q V = 15V Total Gate Charge GE 90 g V = 300V Q nC Gate-Emitter Charge CE 20 ge I = 30A C Q Gate-Collector Mille) Charge gc 30 SSOA Switching SOA T = 150C, R = 5, V = 120 A J G GE 15V, L = 100H,V = 600V CE t Turn-on Delay Time 13 Inductive Switching (25C) d(on) V (Peak) = 400V CC t Current Rise Time 18 r ns V = 15V GE t Turn-off Delay Time 55 d(off) I = 30A C t 46 Current Fall Time f R = 5 G 4 E Turn-on Switching Energy 260 on1 T = +25C J 5 E Turn-on Switching Energy (Diode) 335 J on2 6 E Turn-off Switching Energy 250 330 off t Turn-on Delay Time Inductive Switching (125C) 13 d(on) V (Peak) = 400V t CC Current Rise Time 18 r ns V = 15V GE t Turn-off Delay Time 84 d(off) I = 30A C t Current Fall Time 80 f R = 5 G 4 E Turn-on Switching Energy 260 on1 T = +125C J 5 Turn-on Switching Energy (Diode) E 508 on2 J 6 E Turn-off Switching Energy 518 750 off THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case (IGBT) .27 JC C/W R Junction to Case (DIODE) N/A JC W Package Weight 5.90 gm T 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, I includes both IGBT and FRED leakages ces 3 See MIL-STD-750 Method 3471. 4E is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current on1 adding to the IGBT turn-on loss. (See Figure 24.) 5E is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching on2 loss. (See Figures 21, 22.) 6E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7400 Rev E 9-2005