APT30M36JLL 300V 76A 0.036 R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses gUL Recognize along with exceptionally fast switching speeds inherent with APT s ISOTOP patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular SOT-227 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT30M36JLL UNIT V Drain-Source Voltage 300 Volts DSS I Continuous Drain Current T = 25C 76 D C Amps 1 I Pulsed Drain Current 304 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 463 C P D Linear Derating Factor W/C 3.70 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 76 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 2500 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 300 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 38A) 0.036 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 300V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 240V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 2.5mA) V Volts 35 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT30M36JLL Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 6480 iss V = 0V GS C Output Capacitance V = 25V 1540 oss DS pF f = 1 MHz C Reverse Transfer Capacitance 75 rss 3 Q Total Gate Charge V = 10V 115 g GS V = 150V Q DD Gate-Source Charge 35 gs nC I = 76A 25C D Q Gate-Drain Mille) Charge 45 gd RESISTIVE SWITCHING t Turn-on Delay Time 15 d(on) V = 15V GS t Rise Time 28 r V = 150V DD ns t I = 76A 25C Turn-off Delay Time D 29 d(off) R = 0.6 G t Fall Time 5 f INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 660 on V = 200V, V = 15V DD GS I = 76A, R = 5 E 790 Turn-off Switching Energy D G off INDUCTIVE SWITCHING 125C J E 6 Turn-on Switching Energy 770 on V = 200V, V = 15V DD GS E I = 76A, R = 5 Turn-off Switching Energy 740 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I 76 Continuous Source Current (Body Diode) S Amps I 1 304 Pulsed Source Current (Body Diode) SM 2 V 1.3 Diode Forward Voltage (V = 0V, I = -76A) Volts SD GS S t 530 Reverse Recovery Time (I = -76A, dl /dt = 100A/s) ns rr S S Q Reverse Recovery Charge (I = -76A, dl /dt = 100A/s) 11.5 C rr S S dv dv 5 V/ns / 5 Peak Diode Recovery / dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.27 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 0.87mH, R = 25, Peak I = 76A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 76A / 700A/s V 300V T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and inforation contained herein. 0.30 0.9 0.25 0.7 0.20 0.15 0.5 Note: 0.10 0.3 t 1 t 2 0.05 0.1 t 1 Duty Factor D = / t 2 SINGLE PULSE 0.05 Peak T = P x Z + T J DM JC C 0 -5 -4 -3 -2 -1 10 10 10 10 10 1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7152 Rev B 7-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM