APT30M61BFLL APT30M61SFLL 300V 54A 0.061 R POWER MOS 7 FREDFET 3 D PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive 3 Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package G FAST RECOVERY BODY DIODE S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT30M61BFLL-SFLL UNIT V Drain-Source Voltage 300 Volts DSS I Continuous Drain Current T = 25C 54 D C Amps 1 I Pulsed Drain Current 216 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts C 403 P D Linear Derating Factor W/C 3.23 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 54 AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 1300 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 300 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, 27A) 0.061 Ohms DS(on) GS Zero Gate Voltage Drain Current (V = 300V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 240V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts 35 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT30M61BFLL - SFLL DYNAMIC CHARACTERISTICS Symbol MIN TYP MAX Characteristic Test Conditions UNIT C Input Capacitance V = 0V 3720 iss GS V = 25V C pF Output Capacitance DS 920 oss f = 1 MHz C Reverse Transfer Capacitance 41 rss Q 3 Total Gate Charge V = 10V 64 g GS V = 150V Q nC Gate-Source Charge DD 23 gs I = 54A 25C D Q Gate-Drain Mille) Charge 26 gd RESISTIVE SWITCHING t 12 Turn-on Delay Time d(on) V = 15V GS t 20 Rise Time r ns V = 150V DD t 36 Turn-off Delay Time d(off) I = 54A 25C D t R = 0.6 Fall Time 13 f G INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 367 on V = 200V, V = 15V DD GS E Turn-off Switching Energy I = 54A, R = 5 319 off D G J INDUCTIVE SWITCHING 125C 6 E 451 Turn-on Switching Energy on V = 200V V = 15V DD GS E Turn-off Switching Energy I = 54A, R = 5 348 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I S Continuous Source Current (Body Diode) 54 Amps I 1 (Body Diode) SM Pulsed Source Current 216 V 2 Volts SD Diode Forward Voltage (V = 0V, I = -54A) 1.3 GS S dv dv 5 / Peak Diode Recovery / V/ns dt 8 dt Reverse Recovery Time T = 25C 225 j t rr ns di (I = -54A, / = 100A/s) S dt T = 125C 400 j Reverse Recovery Charge T = 25C 1.0 j C Q rr di (I = -54A, / = 100A/s) S dt T = 125C 4.2 j Peak Recovery Current T = 25C 10 j I Amps RRM di (I = -54A, / = 100A/s) S dt T = 125C 20 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.31 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 0.89mH, R = 25 , Peak I = 54A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 54A / 700A/s V 300 T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 0.9 0.25 0.7 0.20 0.5 0.15 Note: t 1 0.3 0.10 t 2 t 0.05 1 Duty Factor D = / SINGLE PULSE t 0.1 2 Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7136 Rev A 1-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM