APT30M75BFLL APT30M75SFLL 300V 44A 0.075 BFLL R POWER MOS 7 FREDFET 3 D PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g SFLL along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive 3 G Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package FAST RECOVERY BODY DIODE S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT30M75 UNIT V Drain-Source Voltage 300 Volts DSS I Continuous Drain Current T = 25C 44 D C Amps 1 I Pulsed Drain Current 176 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 329 Watts C P D Linear Derating Factor W/C 2.63 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 44 Amps AR 1 E 30 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 1300 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV = 0V, I = 250A) Drain-Source Breakdown Voltage (V 300 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 44 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 22A) Ohms 0.075 DS(on) GS Zero Gate Voltage Drain Current (V = 300V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 240V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 1mA) 35 Volts GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT30M75 BFLL - SFLL DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 3018 iss V = 0V GS C Output Capacitance 771 pF V = 25V oss DS C f = 1 MHz Reverse Transfer Capacitance 43 rss 3 Q Total Gate Charge V = 10V 57 g GS V = 200V Q nC Gate-Source Charge 21 gs DD I = 44A 25C Q Gate-Drain Miller) Charge D 23 gd t (on) Turn-on Delay Time 13 d V = 15V GS t V = 200V Rise Time 3 r DD ns I = 44A 25C t (off) Turn-off Delay Time 20 d D R = 0.6 t G Fall Time 2 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 44 S Amps 1 I (Body Diode) Pulsed Source Current 176 SM 2 V Diode Forward Voltage (V = 0V, I = -44A) 1.3 Volts SD GS S dv dv 5 Peak Diode Recovery / V/ns / 8 dt dt Reverse Recovery Time T = 25C 200 j ns t rr di (I = -44A, / = 100A/s) S dt T = 125C 400 j Reverse Recovery Charge T = 25C 1.1 j C Q rr di (I = -44A, / = 100A/s) S dt T = 125C 2.7 j Peak Recovery Current T = 25C 10 j I Amps RRM di (I = -44A, / = 100A/s) S dt T = 125C 15.1 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.38 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 1.34mH, R = 25 , Peak I = 44A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 44A / 700A/s V V T 150C dt S D R DSS J 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.40 0.9 0.35 0.30 0.7 0.25 0.5 0.20 Note: 0.15 t 1 0.3 t 2 0.10 t 1 Duty Factor D = / t 2 0.1 0.05 Peak T = P x Z + T J DM JC C 0.05 SINGLE PULSE 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7164 Rev A 1-2003 Z , THERMAL IMPEDANCE (C/W) JC P DM