APT34N80B2C3(G) (G) APT34N80LC3 800V 34A 0.145 Super Junction MOSFET T-MAX TO-264 COOLMOS Power Semiconductors Ultra low R ( ) DS ON Low Miller Capacitance D Ultra Low Gate Charge, Q g Avalanche Energy Rated G Popular T-MAX or TO-264 Package S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT34N80B2C3 LC3 UNIT V Drain-Source Voltage 800 Volts DSS I Continuous Drain Current T = 25C 34 D C Amps 1 I Pulsed Drain Current 102 DM V Gate-Source Voltage Continuous 20 GS Volts V Gate-Source Voltage Transient 30 GSM Total Power Dissipation T = 25C 417 Watts C P D Linear Derating Factor 3.33 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T 300 Lead Temperature: 0.063 from Case for 10 Sec. L dv / Drain-Source Voltage slope (V = 640V, I = 34A, T = 125C) V/ns 50 dt DS D J 7 I Amps Repetitive Avalanche Current 17 AR 7 E Repetitive Avalanche Energy 0.5 AR mJ 4 E Single Pulse Avalanche Energy 670 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 500A) 800 Volts DSS GS D 2 Drain-Source On-State Resistance (V = 10V, I = 22A) R 0.125 0.145 Ohms GS D DS(on) Zero Gate Voltage Drain Current (V = 800V, V = 0V) 1.0 50 DS GS I A DSS Zero Gate Voltage Drain Current (V = 800V, V = 0V, T = 150C) 500 DS GS J I Gate-Source Leakage Current (V = 20V, V = 0V) nA 200 GSS GS DS Gate Threshold Voltage (V = V , I = 2mA) V Volts 2.10 3 3.9 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT34N80B2C3 LC3(G) Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 4510 iss V = 0V GS C Output Capacitance V = 25V 2050 oss DS pF f = 1 MHz C Reverse Transfer Capacitance 110 rss Q 3 V = 10V Total Gate Charge 180 355 g GS V = 400V Q DD Gate-Source Charge 22 gs nC I = 34A 25C D Q Gate-Drain Mille) Charge 90 gd RESISTIVE SWITCHING t Turn-on Delay Time 25 d(on) V = 10V GS t Rise Time 15 r V = 400V DD ns t I = 34A 125C 70 80 Turn-off Delay Time D d(off) R = 2.5 G t Fall Time 69 f INDUCTIVE SWITCHING 25C 6 E 675 Turn-on Switching Energy on V = 533V, V = 15V DD GS E I = 34A, R = 5 Turn-off Switching Energy 580 D G off INDUCTIVE SWITCHING 125C J E 6 1145 Turn-on Switching Energy on V = 533V, V = 15V DD GS E I = 34A, R = 5 670 Turn-off Switching Energy off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I 34 Continuous Source Current (Body Diode) S Amps I 1 102 Pulsed Source Current (Body Diode) SM 2 V 1 1.2 Diode Forward Voltage (V = 0V, I = -34A) Volts SD GS S t Reverse Recovery Time (I = -34A, dl /dt = 100A/s, V = 400V) 855 ns rr S S R Q = -34A, dl /dt = 100A/s, V = 400V) 30 C Reverse Recovery Charge (I rr S S R dv dv 5 V/ns / Peak Diode Recovery / 6 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case .30 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 115.92mH, R = 25, Peak I = 3.4A j G L di temperature 5 I = -34A / = 100A/s V = 480V T = 125C dt S R J 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 6 Eon includes diode reverse recovery. See figures 18, 20. 3 See MIL-STD-750 Method 3471 7 Repetitve avalanche causes additional power losses that can be calculated as P =E *f AV AR Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 0.9 0.25 0.7 0.20 0.5 0.15 Note: t 0.3 1 0.10 t 2 0.05 t 0.1 1 Duty Factor D = / t 2 SINGLE PULSE Peak T = P x Z + T 0.05 J DM JC C 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7147 Rev F 6-2006 Z , THERMAL IMPEDANCE (C/W) JC P DM