TO-247 400V 23A 0.20 APT4020BVFR APT4020SVFR APT4020BVFRG* APT4020SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR FREDFET POWER MOS V 3 Power MOS V is a new generation of high voltage N-Channel enhancement D PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layout. Faster Switching Avalanche Energy Rated D 3 Lower Leakage TO-247 or Surface Mount D Pak G Fast Recovery Body Diode S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT4020B SVFR(G) UNIT V Drain-Source Voltage 400 Volts DSS I Continuous Drain Current T = 25C 23 D C Amps 1 I Pulsed Drain Current 92 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 250 Watts C P D Linear Derating Factor 2 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 23 Amps AR 1 E 30 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 960 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 400 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 23 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 11.5A) Ohms 0.20 DS(on) GS Zero Gate Voltage Drain Current (V = 400V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 320V V , V = 0V, T =125C) 1000 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 1.0mA) Volts 24 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT4020B SVFR(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 2650 iss V = 0V GS C Output Capacitance V = 25V 400 pF oss DS f = 1 MHz C Reverse Transfer Capacitance 180 rss 3 Q V = 10V Total Gate Charge 120 g GS V = 200V Q Gate-Source Charge 16 nC gs DD I = 23A 25C Q Gate-Drain Mille) Charge D 60 gd t (on) Turn-on Delay Time V = 15V 10 d GS t V = 200V Rise Time 11 r DD ns I = 23A 25C t (off) Turn-off Delay Time D 38 d R = 1.6 t Fall Time G 7 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT Continuous Source Current (Body Diode) I 23 S Amps 1 Pulsed Source Current (Body Diode) I 92 SM 2 Diode Forward Voltage (V = 0V, I = -23A) V 1.3 Volts GS S SD dv 5 dv Peak Diode Recovery / / 15 V/ns dt dt Reverse Recovery Time T = 25C j t ns rr di (I = -23A, / = 100A/s) S dt T = 125C j T = 25C Reverse Recovery Charge j Q C rr di (I = -23A, / = 100A/s) T = 125C S dt j T = 25C Peak Recovery Current j I Amps RRM di (I = -23A, / = 100A/s) T = 125C j S dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT Junction to Case 0.50 R JC C/W R Junction to Ambient 40 JA 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 3.63mH, R = 25 , Peak I = 23A j G L 2 5dv Pulse Test: Pulse width < 380 s, Duty Cycle < 2% / numbers reflect the limitations of the test circuit rather than the dt di device itself. I -I / 700A/s V V T 150C dt S D Cont. R DSS J APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 D=0.5 0.2 0.1 0.1 0.05 0.05 Note: 0.02 0.01 0.01 t 1 0.005 SINGLE PULSE t 2 t 1 Duty Factor D = / t 2 Peak T = P x Z + T J DM JC C 0.001 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5635 Rev A 5-2006 Z , THERMAL IMPEDANCE (C/W) JC P DM