APT44F80B2 APT44F80L 800V, 47A, 0.21 Max t 370ns rr N-Channel FREDFET T-Max Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-264 This FREDFET version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft rr recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C /C result in excellent noise immunity and low switching loss. The rss iss APT44F80B2 APT44F80L intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Single die FREDFET FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Low t for high reliability Half bridge rr Ultra low C for improved noise immunity PFC and other boost converter rss Low gate charge Buck converter Avalanche energy rated Single and two switch forward RoHS compliant Flyback Absolute Maximum Ratings Symbol Parameter Ratings Unit 47 Continuous Drain Current T = 25C C I D Continuous Drain Current T = 100C 29 A C 1 I Pulsed Drain Current 173 DM V Gate - Source Voltage 30 V GS 2 E Single Pulse Avalanche Energy 1980 mJ AS I 24 A Avalanche Current, Repetitive or Non-Repetitive AR Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit P Total Power Dissipation T = 25C - - 1135 W D C - - .11 R Junction to Case Thermal Resistance JC C/W -.11- R Case to Sink Thermal Resistance, Flat, Greased Surface CS T , T -55 - 150 Operating and Storage Junction Temperature Range J STG C T - - 300 Soldering Temperature for 10 Seconds (1.6mm from case) L - 0.22 - oz W Package Weight T - 6.2 - g - - 10 inlbf Torque Mounting Torque (TO-264 Package), 4-40 or M3 screw - - 1.1 Nm Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT44F80B2 L J Symbol Parameter Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage V V = 0V, I = 250A 800 V BR(DSS) GS D Breakdown Voltage Temperature Coef cient Reference to 25C, I = 250A V /T 0.87 V/C D BR(DSS) J 3 Drain-Source On Resistance R V = 10V, I = 24A 0.17 0.21 DS(on) GS D V Gate-Source Threshold Voltage 2.5 4 5 V GS(th) V = V , I = 2.5mA GS DS D Threshold Voltage Temperature Coef cient V /T -10 mV/C GS(th) J T = 25C 250 V = 800V J DS I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 1000 GS J Gate-Source Leakage Current nA I V = 30V 100 GSS GS Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit Forward Transconductance V = 50V, I = 24A S g 43 DS D fs Input Capacitance 9330 C iss V = 0V, V = 25V GS DS Reverse Transfer Capacitance 160 C rss f = 1MHz C Output Capacitance 930 pF oss 4 Effective Output Capacitance, Charge Related 440 C o(cr) V = 0V, V = 0V to 533V GS DS 5 Effective Output Capacitance, Energy Related 220 C o(er) Total Gate Charge 305 Q g V = 0 to 10V, I = 24A, GS D Q Gate-Source Charge 51 nC gs V = 400V DS Gate-Drain Charge 155 Q gd Turn-On Delay Time 55 t d(on) Resistive Switching t Current Rise Time 75 r V = 400V, I = 24A ns DD D Turn-Off Delay Time 230 t d(off) 6 R = 4.7 , V = 15V G GG Current Fall Time 70 t f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit MOSFET symbol Continuous Source Current (Body Diode) 47 I S showing the integral A 1 reverse p-n junction I Pulsed Source Current (Body Diode) 173 SM diode (body diode) Diode Forward Voltage V I = 24A, T = 25C, V = 0V 1.2 V SD SD J GS T = 25C 320 370 J t Reverse Recovery Time nS rr T = 125C 590 710 J 3 I = 24A SD T = 25C 1.91 J Reverse Recovery Charge di /dt = 100A/s C Q rr SD T = 125C 5.18 V = 100V J DD T = 25C 12.1 I J rrm Reverse Recovery Current A T = 125C 18.1 J I 24A, di/dt 1000A/s, V = 400V, SD DD dv/dt Peak Recovery dv/dt 25 V/ns T = 125C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 6.9mH, R = 25, I = 24A. J G AS 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 C is de ned as a xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is de ned as a xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -8.32E-8/V 2 + 3.49E-8/V + 1.30E-10. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-8161 Rev D 8-2011