TO-247 APT47N65BC3 APT47N65SC3 650V 47A 0.070 COOL MOS Super Junction MOSFET Po wer Se miconduc tors 3 D PAK Ultra low R DS(ON) Increased Power Dissipation Low Miller Capacitance D Ultra Low Gate Charge, Q g Avalanche Energy Rated G 3 TO-247 or Surface Mount D PAK Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT47N65B SC3 UNIT V Drain-Source Voltage 650 Volts DSS I Continuous Drain Current T = 25C 47 D C Amps 1 I Pulsed Drain Current 141 DM V Gate-Source Voltage Continuous 20 GS Volts V Gate-Source Voltage Transient 30 GSM Total Power Dissipation T = 25C Watts 417 C P D Linear Derating Factor W/C 3.33 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 260 L dv V/ns / Drain-Source Voltage slope (V = 480V, I = 47A, T = 125C) 50 dt DS D J 7 7 Amps I Repetitive Avalanche Current ++++Repetitive Avalanche Energy 20 AR 4 E 1 Single Pulse Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 1800 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 650 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 30A) Ohms 0.06 0.07 DS(on) GS D Zero Gate Voltage Drain Current (V = 650V, V = 0V) 0.5 25 DS GS I A DSS Zero Gate Voltage Drain Current (V = 650V, V = 0V, T = 150C) 250 DS GS J Gate-Source Leakage Current (V = 20V, V = 0V) I nA 100 GS DS GSS V Gate Threshold Voltage (V = V , I = 2.7mA) Volts 2.10 3 3.9 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.COOLMOS comprise a new family of transistors developed by Infineon Technologies AG.COOLMO is a trade- mark of Infineon Technologies AG Microsemi Website - DYNAMIC CHARACTERISTICS APT47N65BC3 Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 6965 8355 iss V = 0V GS C Output Capacitance 2100 2940 V = 25V oss pF DS C Reverse Transfer Capacitance f = 1 MHz 85 127 rss 3 Q Total Gate Charge V = 10V 250 375 g GS V = 300V Q Gate-Source Charge DD 30 45 gs nC I = 47A 25C D Q Gate-Drain Mille) Charge 105 157 gd INDUCTIVE SWITCHING t Turn-on Delay Time 18 36 d(on) V = 13V GS t Rise Time 28 56 r V = 380V DD ns t I = 47A 125C Turn-off Delay Time 295 442 d(off) D R = 5 G t Fall Time 84 168 f INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 810 1620 on V = 400V, V = 15V DD GS E Turn-off Switching Energy I = 47A, R = 5 840 1680 off D G J INDUCTIVE SWITCHING 125C 6 E Turn-on Switching Energy 1172 1758 on V = 400V V = 15V DD GS E Turn-off Switching Energy I = 47A, R = 5 985 1970 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX 47 I Continuous Source Current (Body Diode) S Amps 1 I 141 Pulsed Source Current (Body Diode) SM 2 V 1.2 Volts Diode Forward Voltage (V = 0V, I = -47A) SD GS S ns t 580 650 Reverse Recovery Time (I = -47A, dl /dt = 100A/s, V = 350V) rr S S R C Q 23 16.5 Reverse Recovery Charge (I = -47A, dl /dt = 100A/s, V = 350V) rr S S R dv dv 5 V/ns / 6 Peak Diode Recovery / dt dt THERMAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case 0.30 JC C/W R Junction to Ambient 62 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 36.0mH, R = 25, Peak I = 10A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I = -I 47A , / = 700A/s V = V , T = 150C S D R DSS J dt 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as P =E *f AV AR Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 0.9 0.25 0.7 0.20 0.5 0.15 Note: t 1 0.3 0.10 t 2 SINGLE PULSE t 0.05 1 t 0.1 Duty Factor D = / 2 Peak T = P x Z + T 0.05 J DM JC C 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7202 Rev C 6-2014 Z , THERMAL IMPEDANCE (C/W) JC P DM