TO-247 APT53N60BC6 APT53N60SC6 600V 53A 0.070 COOLMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) 3 D PAK Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche Energy Rated dv Extreme / Rated dt D 3 Popular TO-247 or Surface Mount D package. G S MAXIMUM RATINGS All Ratings per die: T = 25C unless otherwise speci ed. C Symbol Parameter APT53N60B SC6 UNIT Drain-Source Voltage 600 Volts V DSS 53 Continuous Drain Current T = 25C C I D 34 Amps Continuous Drain Current T = 100C C 1 159 I Pulsed Drain Current DM Gate-Source Voltage Continuous 20 Volts V GS 417 Watts P Total Power Dissipation T = 25C D C Operating and Storage Junction Temperature Range - 55 to 150 T ,T J STG C Lead Temperature: 0.063 from Case for 10 Sec. 260 T L 2 9.3 Amps I Avalanche Current AR 2 1.72 E Repetitive Avalanche Energy ( Id =9.3A, Vdd = 50V ) AR mJ 1135 E Single Pulse Avalanche Energy ( Id = 9.3A, Vdd = 50V ) AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT 600 Volts BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) (DSS) GS D 3 0.070 Ohms R Drain-Source On-State Resistance (V = 10V, I = 25.8A) DS(on) GS D 25 Zero Gate Voltage Drain Current (V = 600V, V = 0V) DS GS A I DSS 250 Zero Gate Voltage Drain Current (V = 600V, V = 0V, T = 150C) DS GS C 100 nA I Gate-Source Leakage Current (V = 20V, V = 0V) GSS GS DS 2.5 3 3.5 Volts V Gate Threshold Voltage (V = V , I = 1.72mA) GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.COOLMOS comprise a new family of transistors developed by In neon Technologies AG.COOLMO is a trade- mark of In neon Technologies AG Microsemi Website - DYNAMIC CHARACTERISTICS APT53N60B SC6 Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 4020 iss V = 0V GS C 3545 Output Capacitance V = 25V pF oss DS f = 1 MHz C 330 Reverse Transfer Capacitance rss 4 Q 154 Total Gate Charge g V = 10V GS Q 26 Gate-Source Charge V = 300V nC gs DD I = 53A 25C D Q 82 Gate-Drain Mille) Charge gd t 14 Turn-on Delay Time d(on) INDUCTIVE SWITCHING V = 15V t Rise Time GS 36 r V = 400V ns DD t 151 Turn-off Delay Time d(off) I = 53A 125C D t R = 4.3 74 Fall Time f G 5 E INDUCTIVE SWITCHING 25C 960 Turn-on Switching Energy on V = 400V, V = 15V DD GS E 873 Turn-off Switching Energy off I = 53A, R = 4.3 D G J 5 E 1478 Turn-on Switching Energy INDUCTIVE SWITCHING 125C on V = 400V, V = 15V DD GS E 995 off Turn-off Switching Energy I = 53A, R = 4.3 D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 46 S Amps 1 I Pulsed Source Current (Body Diode) 159 SM 3 V Diode Forward Voltage (V = 0V, I = -53A) 0.9 1.2 Volts SD GS S dv dv 6 / Peak Diode Recovery / 15 V/ns dt dt Reverse Recovery Time t T 795 ns di = 25C rr j (I = -53A, / = 100A/ s) S dt Reverse Recovery Charge Q T 25 C = 25C rr di j (I = -53A, / = 100A/ s) S dt Peak Recovery Current I T 58 Amps di = 25C RRM j (I = -53A, / = 100A/ s) S dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.30 C/W JC R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction temperature 4 See MIL-STD-750 Method 3471 2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery. P = E *f . Pulse width tp limited by Tj max. AV AR 6 Maximum 125C diode commutation speed = di/dt 600A/ s 3 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.35 D = 0.9 0.30 0.25 0.7 0.20 0.5 Note: 0.15 t 1 0.3 0.10 t 2 t 1 0.05 t Duty Factor D = / 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -4 -2 -5 -3 10 10 10 10 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 050-7206 Rev B 8-2010 Z , THERMAL IMPEDANCE (C/W) JC P DM