APT8020B2LL APT8020LLL 800V 38A 0.200 B2LL R POWER MOS 7 MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) LLL and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular T-MAX or TO-264 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT8020B2LL LLL UNIT V Drain-Source Voltage 800 Volts DSS I Continuous Drain Current T = 25C 38 D C Amps 1 I Pulsed Drain Current 152 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts 694 C P D Linear Derating Factor W/C 5.56 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 38 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3000 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 800 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 19A) 0.200 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 800V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 640V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 2.5mA) V Volts DS GS D 35 GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT8020B2LL LLL Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 5200 iss V = 0V GS C Output Capacitance V = 25V 1000 oss DS pF f = 1 MHz C Reverse Transfer Capacitance 190 rss Q 3 Total Gate Charge V = 10V 195 g GS V = 400V Q DD Gate-Source Charge 27 gs nC I = 38A 25C D Q Gate-Drain Mille) Charge 130 gd RESISTIVE SWITCHING t Turn-on Delay Time 12 d(on) V = 15V GS t Rise Time 14 r V = 400V DD ns t I = 38A 25C 39 Turn-off Delay Time D d(off) R = 0.6 G t Fall Time 9 f INDUCTIVE SWITCHING 25C 6 E 875 Turn-on Switching Energy on V = 533V, V = 15V DD GS E I = 38A, R = 5 Turn-off Switching Energy D G 825 off INDUCTIVE SWITCHING 125C J E 6 Turn-on Switching Energy 1450 on V = 533V, V = 15V DD GS E I = 38A, R = 5 Turn-off Switching Energy D G 985 off SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I 38 Continuous Source Current (Body Diode) S Amps 1 I 152 Pulsed Source Current (Body Diode) SM 2 V Diode Forward Voltage (V = 0V, I = -38A) 1.3 Volts SD GS S t Reverse Recovery Time (I = -38A, dl /dt = 100A/s) 920 ns rr S S Q Reverse Recovery Charge (I = -38A, dl /dt = 100A/s) C 20.7 rr S S dv dv 5 V/ns / Peak Diode Recovery / 10 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.18 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 4.16mH, R = 25, Peak I = 38A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 38A / 700A/s V 800 T 150C S D dt R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.20 0.9 0.16 0.7 0.12 0.5 Note: 0.08 t 1 0.3 t 2 0.04 SINGLE PULSE t 1 Duty Factor D = / 0.1 t 2 Peak T = P x Z + T 0.05 J DM JC C 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7063 Rev C 7-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM