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PH1930AL

PH1930AL electronic component of NXP
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See Product Specifications
Part No.PH1930AL
Manufacturer: NXP
Category:MOSFET
Description: Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK
Datasheet: PH1930AL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

37: USD 0.9377 ea
Line Total: USD 34.69

Availability - 0
MOQ: 37  Multiples: 1
Pack Size: 1
     
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Channel Mode
Gate-Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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We proudly offer the PH1930AL MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the PH1930AL MOSFET.

PH1930AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications Consumer applications Notebook Voltage Regulator Module (VRM) Desktop Voltage Regulator Module (VRM) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j 1 I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 and 3 P total power T = 25 C see Figure 2 --97 W tot mb dissipation Dynamic characteristics Q gate-drain charge V = 4.5 V I =10A -7.5 -nC GD GS D V = 12 V see Figure 14 DS and 15 Q total gate charge V = 4.5 V I =10A -30 - nC G(tot) GS D V = 12 V see Figure 14 DS Static characteristics R drain-source V =10V I =15A -1.552 m DSon GS D on-state resistance T =25C j 1 Continuous current is limited by package.NXP Semiconductors PH1930AL N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PH1930AL LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 30 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -30 V DGR j j GS V gate-source voltage -20 20 V GS 1 I drain current V =10V T = 100 C see Figure 1 -100 A D GS mb 1 V =10V T =25C see Figure 1 and 3 -100 A GS mb I peak drain current t 10 s pulsed T =25C see Figure 3 -667 A DM p mb P total power dissipation T =25C see Figure 2 -97 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode 1 I source current T =25C -100 A S mb I peak source current t 10 s pulsed T =25C - 667 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =100 A V 30 V -151 mJ DS(AL)S GS j(init) D sup drain-source avalanche R =50 unclamped GS energy 1 Continuous current is limited by package. PH1930AL 3 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 12 January 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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