Product Information

PH1930AL

PH1930AL electronic component of NXP

Datasheet
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

37: USD 0.9088 ea
Line Total: USD 33.63

0 - Global Stock
MOQ: 37  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Channel Mode
Gate-Source Voltage Max
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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Additional Infomation About Product

PH1930AL N-channel TrenchMOS logic level FET Rev. 03 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing and consumer applications. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications Consumer applications Notebook Voltage Regulator Module (VRM) Desktop Voltage Regulator Module (VRM) 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 30 V DS j j 1 I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 and 3 P total power T = 25 C see Figure 2 --97 W tot mb dissipation Dynamic characteristics Q gate-drain charge V = 4.5 V I =10A -7.5 -nC GD GS D V = 12 V see Figure 14 DS and 15 Q total gate charge V = 4.5 V I =10A -30 - nC G(tot) GS D V = 12 V see Figure 14 DS Static characteristics R drain-source V =10V I =15A -1.552 m DSon GS D on-state resistance T =25C j 1 Continuous current is limited by package.NXP Semiconductors PH1930AL N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PH1930AL LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 30 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -30 V DGR j j GS V gate-source voltage -20 20 V GS 1 I drain current V =10V T = 100 C see Figure 1 -100 A D GS mb 1 V =10V T =25C see Figure 1 and 3 -100 A GS mb I peak drain current t 10 s pulsed T =25C see Figure 3 -667 A DM p mb P total power dissipation T =25C see Figure 2 -97 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode 1 I source current T =25C -100 A S mb I peak source current t 10 s pulsed T =25C - 667 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =100 A V 30 V -151 mJ DS(AL)S GS j(init) D sup drain-source avalanche R =50 unclamped GS energy 1 Continuous current is limited by package. PH1930AL 3 All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 12 January 2010 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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