APT8043BLL APT8043SLL 800V 20A 0.430 R BLL POWER MOS 7 MOSFET 3 D PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) SLL and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G 3 Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT8043BLL SLL UNIT V Drain-Source Voltage 800 Volts DSS I Continuous Drain Current T = 25C 20 D C Amps 1 I Pulsed Drain Current 80 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts C 403 P D Linear Derating Factor W/C 3.23 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 20 AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 1300 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 800 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 5A) 0.43 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 800V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 640V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts 35 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT8043BLL SLL Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 2500 iss V = 0V GS C Output Capacitance V = 25V 485 oss DS pF f = 1 MHz C Reverse Transfer Capacitance 80 rss Q 3 Total Gate Charge V = 10V 85 g GS V = 400V Q DD Gate-Source Charge 13 gs nC I = 20A 25C D Q Gate-Drain Mille) Charge 55 gd RESISTIVE SWITCHING t Turn-on Delay Time 9 d(on) V = 15V GS t Rise Time 5 r V = 400V DD ns t I = 20A 25C 25 Turn-off Delay Time D d(off) R = 1.6 G t Fall Time 5 f INDUCTIVE SWITCHING 25C 6 E 280 Turn-on Switching Energy on V = 533V, V = 15V DD GS E I = 20A, R = 5 Turn-off Switching Energy 125 D G off INDUCTIVE SWITCHING 125C J E 6 460 Turn-on Switching Energy on V = 533V, V = 15V DD GS E I = 20A, R = 5 Turn-off Switching Energy 160 D G off SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I 20 Continuous Source Current (Body Diode) S Amps 1 I 80 Pulsed Source Current (Body Diode) SM 2 V Diode Forward Voltage (V = 0V, I = -20A) 1.3 Volts SD GS S t Reverse Recovery Time (I = -20A, dl /dt = 100A/s) 680 ns rr S S Q Reverse Recovery Charge (I = -20A, dl /dt = 100A/s) C 10.6 rr S S dv dv 5 V/ns / Peak Diode Recovery / 10 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.31 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 6.50mH, R = 25, Peak I = 20A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 20A / 700A/s V 800 T 150C S D dt R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 0.9 0.25 0.7 0.20 0.5 0.15 Note: t 1 0.3 0.10 t 2 SINGLE PULSE t 1 0.05 Duty Factor D = / 0.1 t 2 Peak T = P x Z + T 0.05 J DM JC C 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7056 Rev C 7-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM