IPT111N20NFDATMA1 Infineon

IPT111N20NFD MOSFET HSOF OptiMOS 3 Power-Transistor , 200 V Features Tab N-channel, normal level Fast Diode (FD) with reduced Q rr Optimized for hard commutation ruggedness 1 Very low on-resistance R 2 DS(on) 3 4 5 175 C operating temperature 6 7 8 Pb-free lead plating RoHS compliant 1) Qualified according to JEDEC for target application Halogen-free according to IEC61249-2-21 Drain Table 1 Key Performance Parameters Tab Parameter Value Unit V 200 V DS Gate Pin 1 RDS(on),max 11.1 m Source Pin 2-8 I 96 A D Type / Ordering Code Package Marking Related Links IPT111N20NFD PG-HSOF-8 111N20NF - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev. 2.1, 2016-02-23 OptiMOS 3 Power-Transistor, 200 V IPT111N20NFD Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 3 Electrical characteristics . 3 Electrical characteristics diagrams . 5 Package Outlines 9 Revision History 10 Trademarks . 10 Disclaimer 10 Final Data Sheet 2 Rev. 2.1, 2016-02-23