D 600V /56m GaN Power Transistor G SK S PGA26E07BA Product Overview Overview Panasonics GaN power transistors offer superior device performances enabling higher power conversion efficiency and higher power density of power electronic systems than those by conventional Si-based power devices. Features Crystal growth of GaN on 6-inch silicon substrate. Drain 1,2,3,4 600V enhancement mode power switch Normally-Off operation Source 5,6,9 with single GaN device by Panasonics proprietary Kelvin Source 7 GIT: Gate Injection Transistor technology. Extremely high-speed switching characteristics. Gate 8 Current Collapse Free 600V and more by Panasonics proprietary HD-GIT: Hybrid-Drain-embedded GIT D Zero recovery loss characteristics. Applications G SK Power supply for AC-DC (PFC, Isolated DC-DC) Battery charger system S Photovoltaic power converter, Motor inverter Absolute Maximum Ratings (Tj=25 C, unless otherwise specified) Item Symbol Ratings Unit Drain-source voltage(DC) VDSS 600 V Drain-source voltage( pulse) VDSP 750 V Gate current( DC ) IG 50 mA Drain current (DC) (Tc=25C) ID 31 A Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note All conditions should be within 150C Tj. Thermal Characteristics (Typical values, unless otherwise specified) Item Symbol Ratings Unit Thermal resistance (junction to case) Rth(j-c) max 1.0 C/W Thermal resistance (junction to ambient) Rth(j-a) max 46 C/W Power dissipation (Tc=25C) PD 125 W The products and product specifications described in this document are subject to Panasonic Panasonic change without notice for modification and/or improvement. At the final stage of Industrial Devices Sales Company Semiconductor Solutions Co., Ltd your design, purchasing, or use of the products, therefore, ask for the most up-to- of America date Product Standards in advance to make sure that the latest specifications Two Riverfront Plaza, 7th Floor Newark,NJ,07102, 1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, satisfy your requirements. Japan United States 800-344-2112 81-75-951-8151 As of June, 2019 industrial us.panasonic.com Electrical Characteristics (Typical values at Tj=25 C, unless otherwise specified) Item Symbol Condition Value Unit VDS=600V, VGS=0V, Tj=25C max100 A Drain cut-off current IDSS VDS=600V, VGS=0V, Tj=150C 100 A Gate-source leakage current IGSS VGS= -3V, VDS=0V -1 A Gate threshold voltage VTH VDS=10V, IDS=2.6mA 1.2 V IGS=26.1mA, IDS=8A, Tj=25C 56 m Drain-source on-state resistance RDS(on) IGS=26.1mA, IDS=8A, Tj=150C 110 m Gate resistance RG f=100 MHz, open drain 0.6 Input capacitance Ciss 405 pF Output capacitance Coss VDS=400V, VGS=0V, f=1MHz 71 pF Reverse transfer capacitance Crss 0.4 pF Effective output capacitance Co(er) 87 pF (energy related) VDS=0V to 480V Effective output capacitance Co(tr) 106 pF (time related) Gate charge Qg 5.0 nC Gate-source charge Qgs VDD=400V, IDS=8A 0.9 nC Gate-drain charge Qgd 2.6 nC Gate plateau voltage Vplateau VDD=400V, IDS=8A 1.7 V Source-drain forward voltage VSD VGS=0V,ISD=8A 2.1 V Reverse recovery charge Qrr 0 nC VDS=400V, ISD=8A Output charge Qoss 45 nC Package Outline Unit: mm