X-On Electronics has gained recognition as a prominent supplier of PGA26E19BA-SWEVB008 Power Management IC Development Tools across the USA, India, Europe, Australia, and various other global locations. PGA26E19BA-SWEVB008 Power Management IC Development Tools are a product manufactured by Panasonic. We provide cost-effective solutions for Power Management IC Development Tools, ensuring timely deliveries around the world.

PGA26E19BA-SWEVB008 Panasonic

PGA26E19BA-SWEVB008 electronic component of Panasonic
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Part No.PGA26E19BA-SWEVB008
Manufacturer: Panasonic
Category: Power Management IC Development Tools
Description: Power Management IC Development Tools 600Vdc 190mOhm X-GaN 1/2 Bridge EVB
Datasheet: PGA26E19BA-SWEVB008 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the PGA26E19BA-SWEVB008 from our Power Management IC Development Tools category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PGA26E19BA-SWEVB008 and other electronic components in the Power Management IC Development Tools category and beyond.

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D G S Half bridge evaluation board (with dedicated X-GaN driver + general isolator) for evaluating the performance of X-GaN power transistor EVB Part Number PGA26E07BA-SWEVB008 (~800W) PGA26E19BA-SWEVB008 (~400W) Key Device Part Number X-GaN X-GaN Driver X-GaN 70m - PGA26E07BA X-GaN 190m - PGA26E19BA X-GaN Driver - AN34092B Board overview Isolator - Silab Si8275 Overview The PGA26ExxBA-SWEVB008 is a half bridge evaluation board for measuring the switching characteristics of the GaN power transistor and can be easily configured into any half bridge topology for power supply evaluation. Features Maximum input voltage: DC 410V Support evaluation of switching characteristics using 2-pulse test Support continuous power supply test depending on thermal design (up to 400W / 800W using attached heatsink) Reference design for PCB layout and gate driver circuit High speed switching and high frequency operation performance Include isolated DCDC and able to configure to bootstraps design easily Application Half bridge topology for power supply testing Block diagram outline : Test terminal The products and product specifications described in the document are subject to change Panasonic without notice for modification and/or improvement. At the final stage of your design, Semiconductor Solutions Co., Ltd. purchasing, or use of the products, therefore, ask for the most up- to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. 1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan As of March, 2017 Terminal information Terminal Terminal Function Function Name Name IN L Low side input signal with 3.3V/5V CMOS logic option AUXH- Auxiliary power supply ground GND Input ground AUXL+ Auxiliary power supply IN H High side input signal with 3.3V/5V CMOS logic option AUXL- Auxiliary power supply ground EN Enable VPN Half bridge input power supply VDD Isolator input supply (3.3V~5.5V) LX Half bridge output AUXH+ Auxiliary power supply VS Half bridge power ground Recommended Operating Conditions Parameter Condition Parameter Condition DC power supply 100V ~ 410V External clock signal 3.3V~ 5V Auxiliary power supply 10V ~ 13V Temperature 25C Evaluation circuit diagram Low Side Test High Side Test Examples of switching waveforms Important notice To avoid electric shock, please ensure to check the capacitor connected with line VPN and VS is discharged after evaluation. Depending on the conditions of the evaluation, please use an appropriate inductor for the DC superposition characteristics. Otherwise, there is possibility that GaN power transistor is damaged due to large current bym agnetic saturation.. Please adjust the pulse width so the maximum drain-source current rating is not exceeded.

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