APT48M80B2 APT48M80L 800V, 49A, 0.19 Max N-Channel MOSFET T-Max Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-264 A proprietary planar strip design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low CMille capaci- rss tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, APT48M80B2 APT48M80L even when switching at very high frequency. Reliability in yback, boost, forward, and D other circuits is enhanced by the high avalanche energy capability. Single die MOSFET G S FEATURES TYPICAL APPLICATIONS Fast switching with low EMI/RFI PFC and other boost converter Low R Buck converter DS(on) Ultra low C for improved noise immunity Two switch forward (asymmetrical bridge) rss Low gate charge Single switch forward Avalanche energy rated Flyback RoHS compliant Inverters Absolute Maximum Ratings Symbol Parameter Ratings Unit 49 Continuous Drain Current T = 25C C I D Continuous Drain Current T = 100C 30 A C 1 I Pulsed Drain Current 173 DM V Gate - Source Voltage 30 V GS 2 E Single Pulse Avalanche Energy 1979 mJ AS I 24 A Avalanche Current, Repetitive or Non-Repetitive AR Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit P Total Power Dissipation T = 25C - - 1135 W D C - - 0.11 R Junction to Case Thermal Resistance JC C/W - 0.11 - R Case to Sink Thermal Resistance, Flat, Greased Surface CS T , T -55 - 150 Operating and Storage Junction Temperature Range J STG C T - - 300 Soldering Temperature for 10 Seconds (1.6mm from case) L - 0.22 - oz W Package Weight T - 6.2 - g - - 10 inlbf Torque Mounting Torque (TO-264 Package), 4-40 or M3 screw - - 1.1 Nm Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT48M80B2 L J Symbol Parameter Test Conditions Min Typ Max Unit Drain-Source Breakdown Voltage V V = 0V, I = 250 A 800 V BR(DSS) GS D Breakdown Voltage Temperature Coef cient Reference to 25C, I = 250 A V /T 0.87 V/C D BR(DSS) J 3 Drain-Source On Resistance R V = 10V, I = 24A 0.17 0.19 DS(on) GS D V Gate-Source Threshold Voltage 345 V GS(th) V = V , I = 2.5mA GS DS D Threshold Voltage Temperature Coef cient V /T -10 mV/C GS(th) J T = 25C 100 V = 800V J DS I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 500 GS J Gate-Source Leakage Current nA I V = 30V 100 GSS GS Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit Forward Transconductance V = 50V, I = 24A S g 43 DS D fs Input Capacitance 9330 C iss V = 0V, V = 25V GS DS Reverse Transfer Capacitance 160 C rss f = 1MHz C Output Capacitance 930 pF oss 4 Effective Output Capacitance, Charge Related 440 C o(cr) V = 0V, V = 0V to 533V GS DS 5 Effective Output Capacitance, Energy Related 220 C o(er) Total Gate Charge 305 Q g V = 0 to 10V, I = 24A, GS D Q Gate-Source Charge 51 nC gs V = 400V DS Gate-Drain Charge 155 Q gd Turn-On Delay Time 55 t d(on) Resistive Switching t Current Rise Time 75 r V = 400V, I = 24A ns DD D Turn-Off Delay Time 230 t d(off) 6 R = 2.2 , V = 15V G GG Current Fall Time 70 t f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit MOSFET symbol D Continuous Source Current (Body Diode) 49 I S showing the integral A G 1 reverse p-n junction I Pulsed Source Current (Body Diode) 173 SM S diode (body diode) Diode Forward Voltage V I = 24A, T = 25C, V = 0V 0.8 1.0 V SD J GS SD t Reverse Recovery Time 3 970 nS I = 24A rr SD di /dt = 100A/s, T = 25C Q Reverse Recovery Charge 22 C SD J rr I 24A, di/dt 1000A/ s, SD dv/dt Peak Recovery dv/dt 10 V/ns V = 533V, T = 125C DD J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 6.9mH, R = 25, I = 24A. J G AS 3 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 4 C is de ned as a xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is de ned as a xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -8.32E-8/V 2 + 3.49E-8/V + 1.30E-10. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-8162 Rev C 6-2011