APT4F120K 1200V, 4A, 4.2 Max Trr 195nS N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-220 This FREDFET version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft rr recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C /C result in excellent noise immunity and low switching loss. The rss iss intrinsic gate resistance and capacitance of the poly-silicon gate structure help control APT4F120K di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Single die FREDFET FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Low t for high reliability Half bridge rr Ultra low C for improved noise immunity PFC and other boost converter rss Low gate charge Buck converter Avalanche energy rated Single and two switch forward RoHS compliant Flyback Absolute Maximum Ratings Symbol Parameter Ratings Unit 4 Continuous Drain Current T = 25C C I D Continuous Drain Current T = 100C 3 A C 1 I Pulsed Drain Current 15 DM V Gate - Source Voltage 30 V GS 2 E Single Pulse Avalanche Energy 310 mJ AS I 2A Avalanche Current, Repetitive or Non-Repetitive AR Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit P Total Power Dissipation T = 25C - - 225 W D C R Junction to Case Thermal Resistance - - .56 JC C/W R Case to Sink Thermal Resistance, Flat, Greased Surface - .11 - CS T , T Operating and Storage Junction Temperature Range -55 - 150 J STG C T Soldering Temperature for 10 Seconds (1.6mm from case) - - 300 L - 0.07 - oz W Package Weight T - 1.9 - g inlbf -- 10 Torque Mounting Torque (TO-220 Package), 4-40 or M3 screw Nm - - 1.1 Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT4F120K J Symbol Parameter Test Conditions Min Typ Max Unit V Drain-Source Breakdown Voltage V = 0V, I = 250A 1200 V BR(DSS) GS D Reference to 25C, I = 250A V /T Breakdown Voltage Temperature Coef cient 1.41 V/C D BR(DSS) J 3 R Drain-Source On Resistance V = 10V, I = 2A 3.42 4.2 DS(on) GS D V Gate-Source Threshold Voltage 2.5 4 5 V GS(th) V = V , I = 0.5mA GS DS D Threshold Voltage Temperature Coef cient V /T -10 mV/C GS(th) J T = 25C 250 V = 1200V J DS I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 1000 GS J Gate-Source Leakage Current nA I V = 30V 100 GSS GS Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit S Forward Transconductance V = 50V, I = 2A 4.5 g DS D fs Input Capacitance 1385 C iss V = 0V, V = 25V GS DS C Reverse Transfer Capacitance 17 rss f = 1MHz Output Capacitance 100 C pF oss 4 Effective Output Capacitance, Charge Related 40 C o(cr) V = 0V, V = 0V to 800V GS DS 5 C Effective Output Capacitance, Energy Related 20 o(er) 43 Q Total Gate Charge g V = 0 to 10V, I = 2A, GS D 7 Q Gate-Source Charge nC gs V = 600V DS 20 Gate-Drain Charge Q gd Turn-On Delay Time 7.4 t d(on) Resistive Switching t Current Rise Time 4.4 r V = 800V, I = 2A ns DD D Turn-Off Delay Time 24 t d(off) 6 R = 10 , V = 15V G GG Current Fall Time 6.9 t f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current MOSFET symbol I 4 S showing the integral (Body Diode) A reverse p-n junction Pulsed Source Current diode (body diode) I 15 SM 1 (Body Diode) V Diode Forward Voltage I = 2A, T = 25C, V = 0V 0.8 1.2 V SD SD J GS T = 25C 170 195 J t Reverse Recovery Time nS rr 330 400 T = 125C J 3 I = 2A , SD .370 T = 25C J Q Reverse Recovery Charge di /dt = 100A/s, C rr SD T = 125C .820 J V = 100V DD T = 25C 4.90 J I Reverse Recovery Current A rrm 5.40 T = 125C J I 2A, di/dt1000As, V = 800V, SD DD dv/dt Peak Recovery dv/dt 20 V/ns T = 125C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 155.0mH, R = 25, I = 2A. J G AS 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 C is de ned as a xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is de ned as a xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -8.32E-8/V 2 + 3.49E-8/V + 1.30E-10. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-8163 Rev E 8-2011