APT5014BFLL APT5014SFLL 500V 35A 0.140 R POWER MOS 7 FREDFET 3 Power MOS 7 is a new generation of low loss, high voltage, N-Channel D PAK enhancement mode power MOSFETS. Both conduction and switching TO-247 losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive 3 G Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package FAST RECOVERY BODY DIODE S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT5014BFLL SFLL UNIT V 500 Volts Drain-Source Voltage DSS I Continuous Drain Current T = 25C 35 D C Amps 1 I Pulsed Drain Current 140 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts 403 C P D Linear Derating Factor W/C 3.22 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps (Repetitive and Non-Repetitive) Avalanche Current 35 AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 1300 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, 17.5A) 0.140 Ohms DS(on) GS Zero Gate Voltage Drain Current (V = 500V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT5014BFLL SFLL Symbol MIN TYP MAX Characteristic Test Conditions UNIT C Input Capacitance V = 0V 3261 iss GS V = 25V C pF Output Capacitance DS 704 oss f = 1 MHz C Reverse Transfer Capacitance 50 rss Q 3 Total Gate Charge V = 10V 72 g GS V = 550V Q nC Gate-Source Charge DD 20 gs I = 35A 25C D Q Gate-Drain Mille) Charge 36 gd RESISTIVE SWITCHING t 11 Turn-on Delay Time d(on) V = 15V GS t 6 Rise Time r ns V = 550V DD t 23 Turn-off Delay Time d(off) I = 35A 25C D t R = 1.6 Fall Time 3 f G INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 325 on V = 333V, V = 15V DD GS E Turn-off Switching Energy I = 35A, R = 5 249 off D G J INDUCTIVE SWITCHING 125C 6 E 545 Turn-on Switching Energy on V = 333V V = 15V DD GS E Turn-off Switching Energy I = 35A, R = 5 288 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I S Continuous Source Current (Body Diode) 35 Amps I 1 (Body Diode) SM Pulsed Source Current 140 V 2 Volts SD Diode Forward Voltage (V = 0V, I = -35A) 1.3 GS S dv dv 5 / Peak Diode Recovery / V/ns dt 15 dt Reverse Recovery Time T = 25C 250 j t rr ns di (I = -35A, / = 100A/s) S dt T = 125C 525 j Reverse Recovery Charge T = 25C 1.6 j C Q rr di (I = -35A, / = 100A/s) S dt T = 125C 6.0 j Peak Recovery Current T = 25C 13 j I Amps RRM di (I = -35A, / = 100A/s) S dt T = 125C 21 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.31 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 2.12mH, R = 25, Peak I = 35A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -35A / 700A/s V 500V T 150C dt S R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 0.9 0.25 0.7 0.20 0.5 0.15 Note: t 1 0.3 0.10 t 2 t 1 0.05 Duty Factor D = / t 0.1 SINGLE PULSE 2 Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7025 Rev C 6-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM