APT5014BLL(G) APT5014SLL(G) 500V 35A 0.140 R 3 D PAK POWER MOS 7 MOSFET TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G 3 Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT5014BLL-SLL(G) UNIT V Drain-Source Voltage 500 Volts DSS I Continuous Drain Current T = 25C 35 D C Amps 1 I Pulsed Drain Current 140 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts C 403 P D Linear Derating Factor W/C 3.22 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 35 AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 1300 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, 17.5A) 0.140 Ohms DS(on) GS Zero Gate Voltage Drain Current (V = 500V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts 35 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT5014 BLL - SLL Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 3261 iss V = 0V GS C Output Capacitance V = 25V 704 oss DS pF f = 1 MHz C Reverse Transfer Capacitance 50 rss Q 3 Total Gate Charge V = 10V 72 g GS V = 250V Q DD Gate-Source Charge 20 gs nC I = 35A 25C D Q Gate-Drain Mille) Charge 36 gd RESISTIVE SWITCHING t Turn-on Delay Time 11 d(on) V = 15V GS t Rise Time 6 r V = 250V DD ns t I = 35A 25C 23 Turn-off Delay Time D d(off) R = 1.6 G t Fall Time 3 f INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 325 on V = 333V, V = 15V DD GS E I = 35A, R = 5 Turn-off Switching Energy 249 D G off INDUCTIVE SWITCHING 125C J E 6 545 Turn-on Switching Energy on V = 333V, V = 15V DD GS E I = 35A, R = 5 Turn-off Switching Energy 288 D G off SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I 35 Continuous Source Current (Body Diode) S Amps 1 I 140 Pulsed Source Current (Body Diode) SM 2 V Diode Forward Voltage (V = 0V, I = -35A) 1.3 Volts SD GS S t Reverse Recovery Time (I = -35A, dl /dt = 100A/s) 510 ns rr S S Q Reverse Recovery Charge (I = -35A, dl /dt = 100A/s) C 10 rr S S dv dv 5 V/ns / Peak Diode Recovery / 8 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.31 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 2.12mH, R = 25, Peak I = 35A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -35A / 700A/s V 500V T 150C dt S R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 0.9 0.25 0.7 0.20 0.5 0.15 Note: t 1 0.3 0.10 t 2 t 1 0.05 Duty Factor D = / t 0.1 SINGLE PULSE 2 Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7006 Rev B 6-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM