APT5018BLL(G) APT5018SLL(G) 500V 27A 0.180 R BLL POWER MOS 7 MOSFET 3 D PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g SLL along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G 3 Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C APT5018BLL(G) Symbol Parameter UNIT V 500 Drain-Source Voltage Volts DSS I 27 Continuous Drain Current T = 25C D C Amps 1 I 108 Pulsed Drain Current DM V 30 Gate-Source Voltage Continuous GS Volts V 40 Gate-Source Voltage Transient GSM 300 Total Power Dissipation T = 25C Watts C P D 2.4 Linear Derating Factor W/C T ,T -55 to 150 Operating and Storage Junction Temperature Range J STG C T 300 Lead Temperature: 0.063 from Case for 10 Sec. L 1 I 27 Avalanche Current (Repetitive and Non-Repetitive) Amps AR 1 30 E Repetitive Avalanche Energy AR mJ 4 E 1210 Single Pulse Avalanche Energy AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 27 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 13.5A) Ohms 0.18 DS(on) GS Zero Gate Voltage Drain Current (V = 500V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 1mA) Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT5018BLL - SLL(G) Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 2596 iss V = 0V GS C Output Capacitance V = 25V 546 oss DS pF f = 1 MHz C Reverse Transfer Capacitance 38 rss Q 3 V = 10V Total Gate Charge 58 g GS V = 250V Q DD Gate-Source Charge 15 gs nC I = 27A 25C D Q Gate-Drain Mille) Charge 31 gd RESISTIVE SWITCHING t Turn-on Delay Time 9 d(on) V = 15V GS t Rise Time 4 r V = 250V DD ns t I = 27A 25C Turn-off Delay Time D 18 d(off) R = 1.6 G t Fall Time 2 f INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 216 on V = 333V, V = 15V DD GS I = 27A, R = 5 E Turn-off Switching Energy 134 D G off INDUCTIVE SWITCHING 125C J E 6 337 Turn-on Switching Energy on V = 333V V = 15V DD GS E I = 27A, R = 5 Turn-off Switching Energy 162 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I 27 Continuous Source Current (Body Diode) S Amps I 1 100 Pulsed Source Current (Body Diode) SM 2 V Diode Forward Voltage (V = 0V, I = -I 27A) 1.3 Volts SD GS S D t Reverse Recovery Time (I = -I 27A, dl /dt = 100A/s) 544 ns rr S D S Q Reverse Recovery Charge (I = -I 27A, dl /dt = 100A/s) C 8 rr S D S dv dv 5 V/ns / Peak Diode Recovery / 8 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.42 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 3.32mH, R = 25 , Peak I = 27A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 27A / 700A/s V V T 150C S D dt R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.45 0.40 0.9 0.35 0.7 0.30 0.25 0.5 Note: 0.20 t 1 0.15 0.3 t 2 0.10 t 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T 0.05 J DM JC C 0.05 SINGLE PULSE 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7004 Rev D 7-2003 Z , THERMAL IMPEDANCE (C/W) JC P DM