TO-247 APT5024BFLL APT5024SFLL 500V 22A 0.240 BFLL R POWER MOS 7 FREDFET (B) 3 Power MOS 7 is a new generation of low loss, high voltage, N-Channel D PAK enhancement mode power MOSFETS. Both conduction and switch- (S) ing losses are addressed with Power MOS 7 by signi cantly lowering C R and Q . Power MOS 7 combines lower conduction and switching G E DS(ON) g losses along with exceptionally fast switching speeds inherent with APT s SFLL G C patented metal gate structure. E Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive 3 Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package FAST RECOVERY BODY DIODE MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter APT5024BFLL SFLL UNIT V Drain-Source Voltage 500 Volts DSS I Continuous Drain Current T = 25C 22 D C Amps 1 I Pulsed Drain Current 88 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM 265 Total Power Dissipation T = 25C Watts C P D Linear Derating Factor 2.12 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 22 Amps AR 1 E 30 Repetitive Avalanche Energy AR mJ 4 E 960 Single Pulse Avalanche Energy AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) Volts 500 DSS GS D 2 I Amps On State Drain Current (V > I x R Max, V = 10V) 22 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 11A) Ohms 0.240 DS(on) GS Zero Gate Voltage Drain Current (V = 500V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 1mA) Volts 3 5 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT5024BFLL SFLL Symbol Characteristic MIN TYP MAX UNIT Test Conditions C Input Capacitance 1900 V = 0V iss GS pF C Output Capacitance V = 25V 417 DS oss f = 1 MHz C Reverse Transfer Capacitance 27 rss 3 Q 43 Total Gate Charge V = 10V g GS Q V = 250V nC Gate-Source Charge 12 gs DD I = 22A 25C Q D 24 Gate-Drain Mille) Charge gd RESISTIVE SWITCHING t Turn-on Delay Time 8 d(on) V = 15V GS t 6 Rise Time r ns V = 250V DD t Turn-off Delay Time 18 d(off) I = 22A 25C D t Fall Time 2 R = 0.6W f G INDUCTIVE SWITCHING 25C 6 E 167 Turn-on Switching Energy on V = 333V, V = 15V DD GS E Turn-off Switching Energy 86 I = 22A, R = 5W off D G J INDUCTIVE SWITCHING 125C 6 E 262 Turn-on Switching Energy on V = 333V V = 15V DD GS E Turn-off Switching Energy 99 I = 22A, R = 5W off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX I Continuous Source Current (Body Diode) 22 S Amps 1 I Pulsed Source Current (Body Diode) 88 SM 2 V Volts Diode Forward Voltage (V = 0V, I = -I 22A) 1.3 SD GS S D dv dv 5 / V/ns Peak Diode Recovery / 15 dt dt Reverse Recovery Time T = 25C 250 j t ns di rr (I = -I 22A, / = 100A/ s) S D dt T = 125C 400 j Reverse Recovery Charge T = 25C .500 j C Q di rr (I = -I 22A, / = 100A/ s) T = 125C 1.3 S D dt j Peak Recovery Current T = 25C 7 j Amps I RRM di (I = -I 22A, / = 100A/ s) T = 125C 10 S D dt j THERMAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX Junction to Case 0.47 R qJC C/W Junction to Ambient R 40 qJA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 3.97mH, R = 25W, Peak I = 22A j G L dv temperature 5 / numbers re ect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 27A / 700A/ s V V T 150C S D R DSS J dt 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See gures 18, 20. APT Reserves the right to change, without notice, the speci cations and information contained herein. 0.50 0.9 0.40 0.7 0.30 0.5 0.20 0.3 0.10 0.1 0.05 SINGLE PULSE 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7131 Rev D 10-2009 Z , THERMAL IMPEDANCE (C/W) JC