APT50M50L2LL 500V 89A 0.050 R POWER MOS 7 MOSFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular TO-264 MAX Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Parameter Symbol APT50M50L2LL UNIT V Drain-Source Voltage 500 Volts DSS I Continuous Drain Current T = 25C 89 D C Amps 1 I Pulsed Drain Current 356 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 893 C P D Linear Derating Factor W/C 7.14 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 89 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3200 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, 44.5A) 0.050 Ohms DS(on) GS Zero Gate Voltage Drain Current (V = 500V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 5mA) V Volts DS GS D 35 GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT50M50L2LL DYNAMIC CHARACTERISTICS Test Conditions Characteristic MIN TYP MAX UNIT Symbol C Input Capacitance 10550 iss V = 0V GS C Output Capacitance V = 25V 2060 pF oss DS f = 1 MHz C Reverse Transfer Capacitance 105 rss Q 3 Total Gate Charge V = 10V 200 g GS V = 250V Q DD Gate-Source Charge nC 50 gs I = 89A 25C D Q Gate-Drain Mille) Charge 105 gd RESISTIVE SWITCHING t Turn-on Delay Time 24 d(on) V = 15V GS t Rise Time 22 r V = 250V DD ns I = 89A 25C t 56 Turn-off Delay Time D d(off) R = 0.6 G t Fall Time 8 f INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 1490 on = 333V, V = 15V V DD GS = 89A, R = 3 E I Turn-off Switching Energy 1650 D G off J INDUCTIVE SWITCHING 125C E 6 Turn-on Switching Energy 2105 on V = 333V, V = 15V DD GS E I = 89A, R = 3 Turn-off Switching Energy 1835 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS MIN TYP MAX Symbol Characteristic / Test Conditions UNIT I 89 Continuous Source Current (Body Diode) S Amps I 1 356 Pulsed Source Current (Body Diode) SM 2 V 1.3 Diode Forward Voltage (V = 0V, I = -89A) Volts SD GS S t 680 Reverse Recovery Time (I = -89A, dl /dt = 100A/s) ns rr S S Q Reverse Recovery Charge (I = -89A, dl /dt = 100A/s) 17.0 C rr S S dv dv 5 V/ns / Peak Diode Recovery / 8 dt dt THERMAL CHARACTERISTICS Symbol UNIT Characteristic MIN TYP MAX R Junction to Case 0.14 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 0.81mH, R = 25 , Peak I = 89A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -89A / 700A/s V 500V T 150C dt S R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16 0.14 0.9 0.12 0.7 0.10 0.08 0.5 Note: 0.06 t 1 0.3 t 0.04 2 t 1 Duty Factor D = / t 2 0.02 0.1 Peak T = P x Z + T J DM JC C 0.05 SINGLE PULSE 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7043 Rev C 2-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM