APT50M60L2VR 500V 77A 0.060 POWER MOS V MOSFET TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Package Avalanche Energy Rated D Faster Switching G Lower Leakage S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT50M60L2VR UNIT V Drain-Source Voltage 500 Volts DSS I Continuous Drain Current T = 25C 77 D C Amps 1 I Pulsed Drain Current 308 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts C 833 P D Linear Derating Factor W/C 6.67 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 77 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3200 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV = 0V, I = 250A) Drain-Source Breakdown Voltage (V 500 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 38.5A) 0.060 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 500V, V = 0V) 25 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 250 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 5mA) V Volts 24 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT50M60L2VR Test Conditions UNIT Symbol Characteristic MIN TYP MAX C Input Capacitance 10600 iss V = 0V GS C Output Capacitance pF V = 25V 1800 oss DS f = 1 MHz C Reverse Transfer Capacitance 795 rss Q 3 Total Gate Charge V = 10V 560 g GS V = 250V Q DD nC Gate-Source Charge 70 gs I = 77A 25C D Q Gate-Drain Mille) Charge 285 gd RESISTIVE SWITCHING t Turn-on Delay Time 20 d(on) V = 15V GS t Rise Time 25 r V = 250V DD ns t I = 77A 25C 80 Turn-off Delay Time D d(off) R = 0.6 G t Fall Time 8 f INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 1510 on V = 333V, V = 15V DD GS E I = 77A, R = 5 Turn-off Switching Energy 3450 D G off J INDUCTIVE SWITCHING 125C E 6 2065 Turn-on Switching Energy on V = 333V, V = 15V DD GS E I = 77A, R = 5 Turn-off Switching Energy 3830 D G off SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I 77 Continuous Source Current (Body Diode) S Amps I 1 308 Pulsed Source Current (Body Diode) SM 2 V Diode Forward Voltage (V = 0V, I = -I 77A) 1.3 Volts SD GS S D t Reverse Recovery Time (I = -I 77A, dl /dt = 100A/s) ns 680 rr S D S Q Reverse Recovery Charge (I = -I 77A, dl /dt = 100A/s) C 17 rr S D S dv dv 5 V/ns / Peak Diode Recovery / 8 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.15 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 1.08mH, R = 25, Peak I = 77A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 77A / 700A/s V 500V T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.16 0.14 0.9 0.12 0.7 0.10 0.08 0.5 Note: 0.06 t 1 0.3 0.04 t 2 t 1 Duty Factor D = / t 0.02 0.1 2 SINGLE PULSE Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5986 Rev A 5-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM