APT50M75B2LL(G) APT50M75LLL(G) 500V 57A 0.075 R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with APT s LLL patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular T-MAX or TO-264 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT50M75B2LL LLL UNIT V Drain-Source Voltage 500 Volts DSS I Continuous Drain Current T = 25C 57 D C Amps 1 I Pulsed Drain Current 228 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 570 C P D Linear Derating Factor W/C 4.56 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 57 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 2500 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 500 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 28.5A) 0.075 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 500V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 400V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 2.5mA) V Volts DS GS D 35 GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT50M75B2LL LLL(G) Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 5590 iss V = 0V GS C Output Capacitance V = 25V 1180 pF oss DS f = 1 MHz C Reverse Transfer Capacitance 85 rss 3 Q Total Gate Charge V = 10V 125 g GS V = 250V Q DD Gate-Source Charge 33 nC gs I = 57A 25C D Q Gate-Drain Mille) Charge 65 gd RESISTIVE SWITCHING t Turn-on Delay Time 8 d(on) V = 15V GS t Rise Time 19 r V = 250V DD ns t I = 57A 25C 21 d(off) Turn-off Delay Time D R = 0.6 G t Fall Time 3 f INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 755 on V = 333V, V = 15V DD GS I = 57A, R = 5 E Turn-off Switching Energy 725 D G off J INDUCTIVE SWITCHING 125C E 6 Turn-on Switching Energy 1240 on V = 333V V = 15V DD GS E I = 57A, R = 5 Turn-off Switching Energy 845 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN TYP MAX Characteristic / Test Conditions UNIT I 57 Continuous Source Current (Body Diode) S Amps I 1 228 Pulsed Source Current (Body Diode) SM 2 V 1.3 Diode Forward Voltage (V = 0V, I = -57A) Volts SD GS S t 655 Reverse Recovery Time (I = -57A, dl /dt = 100A/s) ns rr S S Q Reverse Recovery Charge (I = -57A, dl /dt = 100A/s) 13.5 C rr S S dv dv 5 V/ns / 8 Peak Diode Recovery / dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.22 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 1.54mH, R = 25, Peak I = 57A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 57A / 700A/s V V T 150C dt S D R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.9 0.2 0.7 0.15 0.5 Note: 0.1 t 1 0.3 t 2 0.05 t 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C 0.05 SINGLE PULSE 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7000 Rev D 9-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM