600V 54A 0.100 APT6010B2FLL APT6010LFLL APT6010B2FLL* APT6010LFLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R B2FLL POWER MOS 7 FREDFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g LFLL along with exceptionally fast switching speeds inherent with Microsemi s patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular T-MAX or TO-264 Package S FAST RECOVERY BODY DIODE MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT6010B2 LFLL UNIT V Drain-Source Voltage 600 Volts DSS I Continuous Drain Current T = 25C 54 D C Amps 1 I Pulsed Drain Current 216 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 690 C P D Linear Derating Factor W/C 5.52 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 54 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3000 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 600 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 27A) 0.100 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 600V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 480V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 2.5mA) V Volts DS GS D 35 GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - APT6010B2 LFLL DYNAMIC CHARACTERISTICS Symbol MIN TYP MAX Characteristic Test Conditions UNIT C V = 0V Input Capacitance 6710 iss GS V = 25V C pF Output Capacitance 1250 DS oss f = 1 MHz C Reverse Transfer Capacitance 90 rss Q 3 Total Gate Charge V = 10V 150 g GS V = 300V Q nC Gate-Source Charge DD 30 gs I = 54A 25C D Q Gate-Drain Mille) Charge 75 gd RESISTIVE SWITCHING t 12 Turn-on Delay Time d(on) V = 15V GS t 19 Rise Time r ns V = 300V DD t 34 Turn-off Delay Time d(off) I = 54A 25C D t R = 0.6 Fall Time 9 f G INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 885 on V = 400V, V = 15V DD GS E Turn-off Switching Energy I = 54A, R = 5 970 off D G J INDUCTIVE SWITCHING 125C 6 E Turn-on Switching Energy 1150 on V = 400V V = 15V DD GS E Turn-off Switching Energy I = 54A, R = 5 1220 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) S 54 Amps 1 I Pulsed Source Current (Body Diode) SM 216 2 V Diode Forward Voltage (V = 0V, I = -54A) Volts SD 1.3 GS S dv dv 5 / Peak Diode Recovery / V/ns dt 15 dt Reverse Recovery Time T = 25C 300 j t ns rr di (I = -54A, / = 100A/s) S dt T = 125C 600 j Reverse Recovery Charge T = 25C 2.7 j C Q rr di (I = -54A, / = 100A/s) T = 125C 7.8 S dt j T = 25C 14 j Peak Recovery Current I Amps RRM di (I = -54A, / = 100A/s) T = 125C 20 S dt j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT Junction to Case 0.18 R JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 2.06mH, R = 25, Peak I = 54A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 54A / 700A/s V 600V T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and inforation contained herein. 0.20 D = 0.9 0.16 0.7 0.12 0.5 Note: 0.08 t 1 0.3 t 2 t 0.04 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7062 Rev D 6-2006 Z , THERMAL IMPEDANCE (C/W) JC P DM