600V 54A 0.100 APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R B2LL POWER MOS 7 MOSFET T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with Microsemi s LLL patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation G Lower Miller Capacitance Easier To Drive Lower Gate Charge, Qg Popular T-MAX or TO-264 Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT6010B2 LLL UNIT V Drain-Source Voltage 600 Volts DSS I Continuous Drain Current T = 25C 54 D C Amps 1 I Pulsed Drain Current 216 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 690 C P D Linear Derating Factor W/C 5.52 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 54 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3000 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 600 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 27A) 0.100 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 600V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 480V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 2.5mA) V Volts DS GS D 35 GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT6010B2 LLL Test Conditions Symbol Characteristic MIN TYP MAX UNIT C Input Capacitance 6710 iss V = 0V GS C Output Capacitance V = 25V 1250 oss DS pF f = 1 MHz C Reverse Transfer Capacitance 90 rss Q 3 Total Gate Charge V = 10V 150 g GS V = 300V Q DD Gate-Source Charge 30 gs nC I = 54A 25C D Q Gate-Drain Mille) Charge 75 gd RESISTIVE SWITCHING t Turn-on Delay Time 12 d(on) V = 15V GS t Rise Time 19 r V = 300V DD ns t I = 54A 25C 34 Turn-off Delay Time D d(off) R = 0.6 G t Fall Time 9 f INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 885 on V = 400V, V = 15V DD GS E I = 54A, R = 5 Turn-off Switching Energy 970 D G off INDUCTIVE SWITCHING 125C J E 6 1150 Turn-on Switching Energy on V = 400V V = 15V DD GS E I = 54A, R = 5 Turn-off Switching Energy 1220 D G off SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions UNIT MIN TYP MAX I Continuous Source Current (Body Diode) 54 S Amps 1 I 216 Pulsed Source Current (Body Diode) SM 2 V Diode Forward Voltage (V = 0V, I = -54A) Volts 1.3 SD GS S t Reverse Recovery Time (I = -54A, dl /dt = 100A/s) ns 790 rr S S Q Reverse Recovery Charge (I = -54A, dl /dt = 100A/s) C 18 rr S S dv dv 5 V/ns / Peak Diode Recovery / 8 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.18 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 2.06mH, R = 25, Peak I = 54A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 54A / 700A/s V 600V T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and inforation contained herein. 0.20 D = 0.9 0.16 0.7 0.12 0.5 Note: 0.08 t 1 0.3 t 2 t 0.04 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7051 Rev F 6-2006 Z , THERMAL IMPEDANCE (C/W) JC P DM