APT6011B2VR APT6011LVR 600V 49A 0.110 B2VR POWER MOS V MOSFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR TO-264 MAX Package Avalanche Energy Rated D Faster Switching Lower Leakage G S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT6011B2VR LVR UNIT V Drain-Source Voltage 600 Volts DSS I Continuous Drain Current T = 25C 49 D C Amps 1 I Pulsed Drain Current 196 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 625 C P D Linear Derating Factor W/C 5.00 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 49 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3000 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 600 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 24.5A) 0.110 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 600V, V = 0V) 25 DS GS I A DSS Zero Gate Voltage Drain Current (V = 480V, V = 0V, T = 125C) 250 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 2.5mA) V Volts DS GS D 24 GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT6011B2VR LVR MIN TYP MAX Symbol Characteristic Test Conditions UNIT C Input Capacitance 8900 V = 0V iss GS C Output Capacitance V = 25V 1100 pF oss DS C f = 1 MHz Reverse Transfer Capacitance 500 rss Q 3 V = 10V Total Gate Charge 450 g GS V = 300V Q Gate-Source Charge 50 nC DD gs I = 49A 25C Q Gate-Drain Mille) Charge D 200 gd t Turn-on Delay Time V = 15V 17 d(on) GS t V = 300V Rise Time 16 r DD ns I = 49A 25C t Turn-off Delay Time D 65 d(off) R = 0.6 t Fall Time G 6 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN TYP MAX Characteristic / Test Conditions UNIT I 49 Continuous Source Current (Body Diode) S Amps I 1 196 Pulsed Source Current (Body Diode) SM 2 V Diode Forward Voltage (V = 0V, I = -49A) 1.3 Volts SD GS S t Reverse Recovery Time (I = -49A, dl /dt = 100A/s) 760 ns rr S S Q Reverse Recovery Charge (I = -49A, dl /dt = 100A/s) 18.4 C rr S S dv dv 5 V/ns / Peak Diode Recovery / 8 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.20 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 2.50mH, R = 25, Peak I = 49A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 49A / 700A/s V 600V T 150C dt S D R J 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.25 0.9 0.20 0.15 0.7 Note: 0.5 0.10 t 1 0.3 t 2 t 0.05 1 Duty Factor D = / t 2 Peak T = P x Z + T 0.1 J DM JC C SINGLE PULSE 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-8059 Rev A 5-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM