APT6021BFLL APT6021SFLL 600V 29A 0.210 R BFLL POWER MOS 7 FREDFET 3 D PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g SFLL along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive 3 G Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package FAST RECOVERY BODY DIODE S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT6021BFLL SFLL UNIT V Drain-Source Voltage 600 Volts DSS I Continuous Drain Current T = 25C 29 D C Amps 1 I Pulsed Drain Current 116 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 400 C P D Linear Derating Factor W/C 3.20 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 29 AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 1300 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 600 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 14.5A) 0.210 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 600V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 480V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts DS GS D 35 GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT6021BFLL SFLL DYNAMIC CHARACTERISTICS Symbol MIN TYP MAX Characteristic Test Conditions UNIT C V = 0V Input Capacitance 3470 iss GS V = 25V C pF Output Capacitance 635 DS oss f = 1 MHz C Reverse Transfer Capacitance 50 rss Q 3 V = 10V 80 Total Gate Charge g GS V = 300V Q nC Gate-Source Charge 20 DD gs I = 29A 25C Q D 44 Gate-Drain Mille) Charge gd RESISTIVE SWITCHING t 10 Turn-on Delay Time d(on) V = 15V GS t Rise Time 7 r V = 300V ns DD t 25 Turn-off Delay Time d(off) I = 29A 25C D t R = 1.6 Fall Time 4 f G INDUCTIVE SWITCHING 25C 6 E 325 Turn-on Switching Energy on V = 400V, V = 15V DD GS E Turn-off Switching Energy I = 29A, R = 5 205 off D G J INDUCTIVE SWITCHING 125C 6 E 500 Turn-on Switching Energy on V = 400V, V = 15V DD GS E 250 Turn-off Switching Energy I = 29A, R = 5 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 29 S Amps 1 I Pulsed Source Current (Body Diode) SM 116 2 V Diode Forward Voltage (V = 0V, I = -29A) Volts SD 1.3 GS S dv dv 5 / Peak Diode Recovery / V/ns 15 dt dt Reverse Recovery Time T = 25C 250 j t ns rr di = -29A, / = 100A/s) (I S dt T = 125C 525 j Reverse Recovery Charge T = 25C 1.5 j C Q rr di (I = -29A, / = 100A/s) S dt T = 125C 5.5 j Peak Recovery Current T = 25C 13 j I di Amps RRM (I = -29A, / = 100A/s) S dt T = 125C 23 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.31 JC C/W Junction to Ambient R 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 3.09mH, R = 25, Peak I = 29A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 29A / 700A/s V V T 150C S D dt R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 0.30 0.9 0.25 0.7 0.20 0.5 Note: 0.15 t 1 0.3 0.10 t 2 t 1 Duty Factor D = / t 2 0.05 0.1 Peak T = P x Z + T J DM JC C 0.05 SINGLE PULSE 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7068 Rev C 9-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM