APT6030BVR APT6030SVR 600V 21A 0.300 BVR POWER MOS V MOSFET 3 D PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. SVR Faster Switching Avalanche Energy Rated D Lower Leakage 3 TO-247 or Surface Mount D PAK Package G S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT6030BVR SVR UNIT V Drain-Source Voltage 600 Volts DSS I Continuous Drain Current T = 25C 21 D C Amps 1 I Pulsed Drain Current 84 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts 298 C P D Linear Derating Factor W/C 2.38 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 21 AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 1300 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 600 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 10.5A) 0.300 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 600V, V = 0V) 25 DS GS I A DSS Zero Gate Voltage Drain Current (V = 480V, V = 0V, T = 125C) 250 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts DS GS D 24 GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT6030BVR SVR MIN TYP MAX Symbol Characteristic Test Conditions UNIT C Input Capacitance 3750 V = 0V iss GS C Output Capacitance V = 25V 430 pF oss DS C f = 1 MHz Reverse Transfer Capacitance 160 rss Q 3 V = 10V Total Gate Charge 150 g GS V = 300V Q Gate-Source Charge 18 nC DD gs I = 21A 25C Q Gate-Drain Mille) Charge D 60 gd t Turn-on Delay Time V = 15V 12 d(on) GS t V = 300V Rise Time 10 r DD ns I = 21A 25C t Turn-off Delay Time D 47 d(off) R = 1.6 t Fall Time G 8 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN TYP MAX Characteristic / Test Conditions UNIT I 21 Continuous Source Current (Body Diode) S Amps I 1 84 Pulsed Source Current (Body Diode) SM 2 V Diode Forward Voltage (V = 0V, I = -21A) 1.3 Volts SD GS S t Reverse Recovery Time (I = -21A, dl /dt = 100A/s) 475 ns rr S S Q Reverse Recovery Charge (I = -21A, dl /dt = 100A/s) 10 C rr S S dv dv 5 V/ns / Peak Diode Recovery / 8 dt dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.42 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 5.90mH, R = 25, Peak I = 21A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 21A / 700A/s V 600V T 150C dt S D R J 3 See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 D=0.5 0.2 0.1 0.1 0.05 0.05 Note: 0.02 0.01 t 0.01 1 0.005 SINGLE PULSE t 2 t 1 Duty Factor D = / t 2 Peak T = P x Z + T J DM JC C 0.001 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5517 Rev B 5-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM