APT6038BLL APT6038SLL 600V 17A 0.380 R BLL POWER MOS 7 MOSFET 3 D PAK TO-247 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g SLL along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. D Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive G 3 Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT6038BLL SLL UNIT V Drain-Source Voltage 600 Volts DSS I Continuous Drain Current T = 25C 17 D C Amps 1 I Pulsed Drain Current 68 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C Watts C 265 P D Linear Derating Factor W/C 2.12 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 17 AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 960 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 600 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 8.5A) 0.380 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 600V, V = 0V) 100 DS GS I A DSS Zero Gate Voltage Drain Current (V = 480V, V = 0V, T = 125C) 500 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts 35 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT6038BLL SLL Test Conditions MIN TYP MAX Symbol Characteristic UNIT C Input Capacitance 1850 iss V = 0V GS C Output Capacitance 365 V = 25V pF oss DS f = 1 MHz C Reverse Transfer Capacitance 30 rss Q 3 Total Gate Charge V = 10V g GS 43 V = 300V Q Gate-Source Charge DD 11 nC gs I = 17A 25C D Q Gate-Drain Mille) Charge 23 gd RESISTIVE SWITCHING t Turn-on Delay Time 9 d(on) V = 15V GS t Rise Time 3 r V = 300V DD ns t I = 17A 25C 17 Turn-off Delay Time D d(off) R = 1.6 G t Fall Time 4 f INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 190 on V = 400V, V = 15V DD GS E I = 17A, R = 5 Turn-off Switching Energy 46 D G off J INDUCTIVE SWITCHING 125C E 6 310 Turn-on Switching Energy on V = 400V V = 15V DD GS E I = 17A, R = 5 Turn-off Switching Energy 50 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN TYP MAX Characteristic / Test Conditions UNIT I 17 Continuous Source Current (Body Diode) S Amps I 1 68 Pulsed Source Current (Body Diode) SM 2 V 1.3 Diode Forward Voltage (V = 0V, I = -17A) Volts SD GS S t 400 Reverse Recovery Time (I = -17A, dl /dt = 100A/s) ns rr S S Q Reverse Recovery Charge (I = -17A, dl /dt = 100A/s) 6.0 C rr S S dv dv 5 V/ns / Peak Diode Recovery / 8 dt dt THERMAL CHARACTERISTICS Symbol UNIT Characteristic MIN TYP MAX R Junction to Case 0.47 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 6.64mH, R = 25, Peak I = 17A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 17A / 700A/s V V T 150C dt S D R DSS J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.50 0.45 0.9 0.40 0.35 0.7 0.30 0.25 0.5 Note: 0.20 t 1 0.3 0.15 t 2 t 0.10 1 Duty Factor D = / t 2 0.1 Peak T = P x Z + T J DM JC C 0.05 0.05 SINGLE PULSE 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7055 Rev B 9-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM