TO-247 600V 60A 0.045 APT60N60BCSG* APT60N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET (B) COOL MOS Po wer Se miconductors 3 D PAK Ultra Low R DS(ON) (S) Low Miller Capacitance Ultra Low Gate Charge, Q g D Avalanche Energy Rated dv Extreme / Rated dt G 3 Popular TO-247 or Surface Mount D Package S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Parameter Symbol APT60N60B CSG SCSG UNIT V Drain-Source Voltage Volts 600 DSS Continuous Drain Current T = 25C 60 C I D Continuous Drain Current T = 100C Amps 38 C 1 I Pulsed Drain Current 230 DM V Gate-Source Voltage Continuous Volts 30 GS Total Power Dissipation T = 25C 431 Watts C P D Linear Derating Factor 3.45 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 260 L dv / MOSFET dv/dt Ruggedness (V = 480V) V/ns 50 dt DS 2 I Avalanche Current Amps 11 AR 2 E Repetitive Avalanche Energy 3 AR mJ 3 E 1950 Single Pulse Avalanche Energy AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT V Drain-Source Breakdown Voltage (V = 0V, I = 250A) 600 Volts (BR)DSS GS D 4 R Drain-Source On-State Resistance (V = 10V, I = 44A) 0.045 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 600V, V = 0V) 25 DS GS I A DSS Zero Gate Voltage Drain Current (V = 600V, V = 0V, T = 150C) 250 DS GS C I Gate-Source Leakage Current (V = 20V, V = 0V) 100 nA GSS GS DS Gate Threshold Voltage (V = V , I = 3mA) V 2.1 3 3.9 Volts DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.COOLMOS comprise a new family of transistors developed by In neon Technologies AG.COOLMO is a trade- mark of In neon Technologies AG Microsemi Website - DYNAMIC CHARACTERISTICS APT60N60BCSG SCSG Symbol Characteristic MIN TYP MAX UNIT Test Conditions C Input Capacitance V = 0V 7200 iss GS C V = 25V pF Output Capacitance 8500 DS oss f = 1 MHz C Reverse Transfer Capacitance 290 rss Q 5 V = 10V 150 190 g Total Gate Charge GS Q V = 400V nC Gate-Source Charge DD 34 gs I = 44A 25C Q D gd Gate-Drain Mille) Charge 50 RESISTIVE SWITCHING t Turn-on Delay Time 30 d(on) V = 15V GS t 20 r Rise Time ns V = 400V DD t d(off) Turn-off Delay Time 100 I = 44A 25C D t R = 4.3 Fall Time 10 f G INDUCTIVE SWITCHING 25C E 6 675 on Turn-on Switching Energy V = 400V, V = 15V DD GS E Turn-off Switching Energy I = 44A, R = 4.3 520 off D G J INDUCTIVE SWITCHING 125C 6 E Turn-on Switching Energy 1100 on V = 400V, V = 15V DD GS E Turn-off Switching Energy I = 44A, R = 4.3 635 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 44 S Amps 1 I 180 Pulsed Source Current (Body Diode) SM 4 V Diode Forward Voltage (V = 0V, I = -44A) Volts 1.2 SD GS S t Reverse Recovery Time (I = -44A, dl /dt = 100A/s) ns 600 rr S S Q Reverse Recovery Charge (I = -44A, dl /dt = 100A/s) C 17 rr S S dv dv 7 / Peak Diode Recovery / 4 V/ns dt dt THERMAL CHARACTERISTICS Symbol Characteristic UNIT MIN TYP MAX R Junction to Case 0.29 JC C/W R Junction to Ambient 40 JA 5 See MIL-STD-750 Method 3471 1 Repetitive Rating: Pulse width limited by maximum junction 6 Eon includes diode reverse recovery. See gures 18, 20. temperature 7 We do not recommend using this CoolMOS product in topologies 2 Repetitive avalanche causes additional power losses that can that have fee wheeling load current conducted in the body diode that is be calculated as P = E *f AV AR hard commutated. The current commutation is verysnapp, resulting in 3 Starting T = +25C, L = 33.23mH, R = 25, Peak I = 11A j G L high di/dt at the completion of commutation, and the likelihood of severe 4 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% over-voltage transients due to the resulting high dv/dt. Microsemi Reserves the right to change, without notice, the speci cations and information contained herein. 0.30 D = 0.9 0.25 0.7 0.20 0.5 0.15 Note: 0.10 t 1 0.3 t 2 0.05 t 1 t 0.1 Duty Factor D = / SINGLE PULSE 2 Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7239 Rev D 9-2017 Z , THERMAL IMPEDANCE (C/W) JC P DM